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AM29LV640MT110REF 数据表(PDF) 32 Page - Advanced Micro Devices |
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AM29LV640MT110REF 数据表(HTML) 32 Page - Advanced Micro Devices |
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32 / 66 page ![]() 30 Am29LV640MT/B 26190C8 February 1, 2007 D A TA SH EE T the write buffer. DQ7, DQ6, DQ5, and DQ1 should be monitored to determine the device status during Write Buffer Programming. The write-buffer programming operation can be sus- pended using the standard program suspend/resume commands. Upon successful completion of the Write Buffer Programming operation, the device is ready to execute the next command. The Write Buffer Programming Sequence can be aborted in the following ways: ■ Load a value that is greater than the page buffer size during the Number of Locations to Program step. ■ Write to an address in a sector different than the one specified during the Write-Buffer-Load com- mand. ■ Write an Address/Data pair to a different write-buffer-page than the one selected by the Starting Address during the write buffer data load- ing stage of the operation. ■ Write data other than the Confirm Command after the specified number of data load cycles. The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location loaded), DQ6 = toggle, and DQ5=0. A Write-to-Buffer-Abort Reset command sequence must be written to reset the de- vice for the next operation. Note that the full 3-cycle Write-to-Buffer-Abort Reset command sequence is re- quired when using Write-Buffer-Programming features in Unlock Bypass mode. Accelerated Program The device offers accelerated program operations through the WP#/ACC pin. When the system asserts V HH on the WP#/ACC pin, the device automatically en- ters the Unlock Bypass mode. The system can then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at V HH for operations other than accelerated programming, or device dam- age can result. In addition, no external pullup is neces- sary since the WP#/ACC pin has internal pullup to V CC. Figure 5 illustrates the algorithm for the program oper- ation. See the table, Erase and Program Operations on page 48 in AC Characteristics for parameters, and Figure 17 for timing diagrams. |
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