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AM29LV640MT110REF 数据表(PDF) 57 Page - Advanced Micro Devices

部件名 AM29LV640MT110REF
功能描述  64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit??3.0 Volt-only Boot Sector Flash Memory
PDF  66 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29LV640MT110REF 数据表(HTML) 57 Page - Advanced Micro Devices

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February 1, 2007 26190C8
Am29LV640MT/B
55
D A TA
SH EET
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See Erase And Programming Performance on page 57 for more information.
3. For 1–16 words programmed/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
6. When using the program suspend/resume feature, if the suspend command is issued within t
POLL, tPOLL must be fully re-applied
upon resuming the programming operation. If the suspend command is issued after tPOLL, tPOLL is not required again prior to
reading the status bits upon resuming.
Parameter
Description
Speed Options
JEDEC
Std.
90R
100,
100R
112,
112R
120,
120R
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tDVEH
tDS
Data Setup Time
Min
45
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
352
µs
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Byte
Typ
11
µs
Per Word
Typ
22
µs
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Per Byte
Typ
8.8
µs
Per Word
Typ
17.6
µs
Single Word/Byte Program
Operation (Note 2)
Byte
Typ
100
µs
Word
100
Accelerated Single Word/Byte
Programming Operation (Note 2)
Byte
Typ
90
µs
Word
90
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
RH
RESET High Time Before Write (Note 1)
Min
50
ns
t
POLL
Program Valid Before Status Polling (Note 6)
Max
4
µs



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