AM29LV640MT110REF datasheet(59/66 Pages) AMD

59 / 66 page

February 1, 2007 26190C8

Am29LV640MT/B

DA TA

SH EE T

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25

°C, 3.0 V V

CC. Programming specifications assume that

all bits are programmed to 00h.

2. Maximum values are measured at V

CC = 3.0 V, worst case temperature. Maximum values are valid up to and including 100,000

program/erase cycles.

3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.

4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.

5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.

6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.

7. System-level overhead is the time required to execute the command sequence(s) for the program command. See Tables 12 and

13 for further information on command definitions.

8. The device has a minimum erase and program cycle endurance of 100,000 cycles.

LATCHUP CHARACTERISTICS

Note:

Includes all pins except V

CC. Test conditions: VCC = 3.0 V, one pin at a time.

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time

0.5

sec

Excludes 00h

programming

prior to erasure (Note 6)

Chip Erase Time

128

sec

Single Word/Byte Program Time (Note 3)

Byte

100

800

µs

Excludes system level

overhead (Note 7)

Word

100

800

µs

Accelerated Single Word/Byte Program Time

(Note 3)

Byte

720

µs

Word

720

µs

Total Write Buffer Program Time (Note 4)

352

1800

µs

Effective Write Buffer Program Time (Note 5)

Per Byte

µs

Per Word

113

µs

Total Accelerated Write Buffer Program Time

(Note 4)

282

1560

µs

Effective Accelerated Write Buffer Program

Time (Note 4)

Per Byte

8.8

µs

Per Word

17.6

µs

Description

Min

Max

Input voltage with respect to V

SS on all pins except I/O pins

(including A9, OE#, and RESET#)

–1.0 V

12.5 V

Input voltage with respect to V

SS on all I/O pins

–1.0 V

CC + 1.0 V

CC Current

–100 mA

+100 mA

AM29LV640MT110REF 数据表(PDF) 59 Page - Advanced Micro Devices

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