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AM29SL400CB100REF 数据表(PDF) 32 Page - Advanced Micro Devices

部件名 AM29SL400CB100REF
功能描述  4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
PDF  44 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29SL400CB100REF 数据表(HTML) 32 Page - Advanced Micro Devices

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Am29SL400C
Am29SL400C_00_A6 January 23, 2007
D A TA
SH EE T
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1.
Not 100% tested.
2.
See the Erase and Programming Performance‚ on page 38 section for more information.
Parameter
Speed Options
JEDEC
Std
Description
-100R
-110
-120
-150
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
100
110
120
150
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tWLAX
tAH
Address Hold Time
Min
50
55
60
70
ns
tDVWH
tDS
Data Setup Time
Min
50
55
60
70
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
50
55
60
70
ns
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Programming Operation (Notes 1, 2)
Byte
Typ
10
µs
Word
Typ
12
tWHWH2
tWHWH2
Sector Erase Operation (Notes 1, 2)
Typ
2
sec
tVCS
VCC Setup Time
Min
50
µs
tRB
Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Max
200
ns



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