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AM29SL400CB100REF 数据表(PDF) 40 Page - Advanced Micro Devices |
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AM29SL400CB100REF 数据表(HTML) 40 Page - Advanced Micro Devices |
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40 / 44 page ![]() 38 Am29SL400C Am29SL400C_00_A6 January 23, 2007 D A TA SH EE T ERASE AND PROGRAMMING PERFORMANCE Notes: 1. Typical program and erase times assume the following conditions: 25 °C, 2.0 V V CC, 1,000,000 cycles. Additionally, programming typicals assume checkerboard pattern. 2. Under worst case conditions of 90°C, VCC = 1.8 V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed. 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 5 on page 18 for further information on command definitions. 6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles. Parameter Typ (Note 1) Max (Note 2) Unit Comments Sector Erase Time 2 15 s Excludes 00h programming prior to erasure (Note 4) Chip Erase Time 38 s Byte Programming Time 10 300 µs Excludes system level overhead (Note 5) Word Programming Time 12 360 µs Chip Programming Time (Note 3) Byte Mode 5 40 s Word Mode 3.5 30 s |
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