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TSL2580CS 数据表(PDF) 9 Page - OSRAM GmbH |
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TSL2580CS 数据表(HTML) 9 Page - OSRAM GmbH |
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9 / 53 page ![]() Page 8 ams Datasheet Document Feedback [v1-00] 2016-Apr-05 TSL2580, TSL2581 − Electrical Characteristics Note(s): 1. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 640 nm LEDs and infrared 850 nm LEDs are used for final product testing for compatibility with high-volume production. 2. The 625 nm irradiance Ee is supplied by an AlInGaP light-emitting diode with the following characteristics: peak wavelength λp = 625 nm and spectral halfwidth Δλ½ = 20 nm. 3. The 850 nm irradiance Ee is supplied by a light-emitting diode with the following characteristics: peak wavelength λp = 850 nm and spectral halfwidth Δλ½ = 42 nm. 4. The integration time Tint, is dependent on internal oscillator frequency (fosc) and on the number of integration cycles (ITIME) in the Timing Register (0xFF) as described in the Register section. For nominal fosc = 750 kHz, nominal Tint = 2.7 ms × ITIME. Full scale ADC count value ITIME = 0xDB (100 ms) CH0 37887 counts CH1 37887 ITIME = 0x6C (400 ms) CH0 65535 CH1 65535 ADC count value λp = 625 nm, ITIME = 0xF6 (27 ms), Ee = 171.6 μW/cm 2, gain = 16x CH0 4000 5000 6000 counts CH1 700 λp = 850 nm, ITIME = 0xF6 (27 ms), Ee = 220 μW/cm 2, gain = 16x CH0 4000 5000 6000 CH1 2750 ADC count value ratio: CH1/CH0 λp = 625 nm 10.8 15.8 20.8 % λp = 850 nm 41 55 68 Irradiance responsivity Re λp = 625 nm, ITIME = 0xF6 (27 ms) CH0 29.1 counts/ ( μW/cm2) CH1 4 λp = 850 nm, ITIME = 0xF6 (27 ms) CH0 22.8 CH1 12.5 Gain scaling (relative to 1x) 8x CH0 7 8 9 x CH1 7 8 9 16x CH0 15 16 17 CH1 15 16 17 111x CH0 97 107 115 CH1 100 115 125 Parameter Test Conditions Channel Min Typ Max Unit |
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