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SSM2211CP-R2 数据表(PDF) 16 Page - Analog Devices |
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SSM2211CP-R2 数据表(HTML) 16 Page - Analog Devices |
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16 / 24 page ![]() SSM2211 Rev. D | Page 16 of 24 POWER DISSIPATION Another important advantage in using a bridged-output config- uration is the fact that bridged-output amplifiers are more efficient than single-ended amplifiers in delivering power to a load. Efficiency is defined as the ratio of power from the power supply to power delivered to the load SY L P P = η An amplifier with a higher efficiency has less internal power dissipation, which results in a lower die-to-case junction tem- perature as compared to an amplifier that is less efficient. This is important when considering the amplifier maximum power dissipation rating vs. ambient temperature. An internal power dissipation vs. output power equation can be derived to fully understand this. The internal power dissipation of the amplifier is the internal voltage drop multiplied by the average value of the supply current. An easier way to find internal power dissipation is to measure the difference between the power delivered by the supply voltage source and the power delivered into the load. The waveform of the supply current for a bridged-output amplifier is shown in Figure 43. T T VOUT VPEAK ISY IDD, PEAK TIME IDD, AVG TIME Figure 43. Bridged Amplifier Output Voltage and Supply Current vs. Time By integrating the supply current over a period, T, then dividing the result by T, IDD,AVG can be found. Expressed in terms of peak output voltage and load resistance L PEAK AVG DD R V I π 2 , = (5) Therefore, power delivered by the supply, neglecting the bias current for the device, is L PEAK DD SY R V V P π × = 2 (6) The power dissipated by the amplifier internally is simply the difference between Equation 6 and Equation 3. The equation for internal power dissipated, PDISS, expressed in terms of power delivered to the load and load resistance, is L PEAK DD DISS R V V P π × = 2 2 (7) The graph of this equation is shown in Figure 44. OUTPUT POWER (W) 1.5 0 0 1.5 0.5 1.0 1.0 0.5 VDD = 5V RL = 4Ω RL = 8Ω RL = 16Ω Figure 44. Power Dissipation vs. Output Power with VDD = 5 V Because the efficiency of a bridged-output amplifier (Equation 3 divided by Equation 6) increases with the square root of PL, the power dissipated internally by the device stays relatively flat and actually decreases with higher output power. The maximum power dissipation of the device can be found by differentiating Equation 7 with respect to load power and setting the derivative equal to zero. This yields 0 1 2 2 1 = − × π × = ∂ ∂ − L L DD L DISS P R V P P (8) and occurs when L DD MAX DISS R V P 2 2 , π 2 = (9) Using Equation 9 and the power derating curve in Figure 31, the maximum ambient temperature can be found easily. This ensures that the SSM2211 does not exceed its maximum junction temperature of 150°C. The power dissipation for a single-ended output application where the load is capacitively coupled is given by L L L DD DISS P P R V P − × π × = ∂ 2 2 (10) The graph of Equation 10 is shown in Figure 45. |
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