Data Sheet

ADPA7002

GaAs, pHEMT, MMIC,1/2 W, 18 GHz to 44 GHz, Power Amplifier

Rev. A

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FEATURES

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Output P1dB: 28 dBm (typical at 34 GHz to 44 GHz)

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PSAT: 29.5 dBm (typical at 24 GHz to 34 GHz)

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Gain: 15 dB (typical at 34 GHz to 44 GHz)

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IP3: 38 dBm (typical)

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Integrated power detector

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Supply voltage: 5 V at 700 mA

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16-terminal, 6 mm × 6 mm, ceramic, high frequency, air cavity

package

APPLICATIONS

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Military

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Test instrumentation

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Communications

FUNCTIONAL BLOCK DIAGRAM

Figure 1.

GENERAL DESCRIPTION

The ADPA7002 is a gallium arsenide (GaAs), pseudomorphic high

electron mobility transfer (pHEMT), monolithic microwave integrat-

ed circuit (MMIC), 28 dBm (1/2 W) power amplifier, with an integrat-

ed temperature compensated on-chip power detector that operates

between 18 GHz and 44 GHz. The ADPA7002 provides 15 dB of

small signal gain and 30 dBm of saturated output power (PSAT) at

32 GHz from a 5 V supply. With an IP3 of 38 dBm, the ADPA7002 is

ideal for linear applications such as electronic countermeasure and

instrumentation applications demanding >28 dBm of efficient PSAT.

The RF inputs and outputs are internally matched and dc blocked

for ease of integration into higher level assemblies. The ADPA7002

is housed in a 6 mm × 6 mm, ceramic leadless chip with heat sink

(LCC_HS) that exhibits low thermal resistance and is compatible

with surface-mount manufacturing techniques.