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SC1486AEVB 数据表(PDF) 13 Page - Semtech Corporation

部件名 SC1486AEVB
功能描述  Complete DDR1/2/3 Power Supply Controller
PDF  30 Pages
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制造商  SEMTECH [Semtech Corporation]
网页  http://www.semtech.com
标志 SEMTECH - Semtech Corporation

SC1486AEVB 数据表(HTML) 13 Page - Semtech Corporation

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 2006 Semtech Corp.
www.semtech.com
SC1486A
POWER MANAGEMENT
Application Information (Cont.)
Design Procedure
Prior to designing an output and making component
selections, it is necessary to determine the input voltage
range and the output voltage specifications. For purposes
of demonstrating the procedure the VDDQ output for the
schematic on page 17 will be designed.
The maximum input voltage (V
IN(MAX)) is determined by the
highest AC adaptor voltage. The minimum input voltage
(V
IN(MIN)) is determined by the lowest battery voltage after
accounting for voltage drops due to connectors, fuses
and battery selector switches. For the purposes of this
design example we will use a V
IN range of 7.5V to 20.5V.
Four parameters are needed for the output:
1) nominal output voltage, V
OUT (for DDR2 this is 1.8V)
2) static (or DC) tolerance, TOL
ST (for DDR2 this is
+/-0.1V)
3) transient tolerance, TOL
TR and size of transient (for
DDR2 this is undefined, so assume +/-8% for purposes
of this demonstration).
4) maximum output current, I
OUT (we will design for 10A)
Switching frequency determines the trade-off between
size and efficiency. Increased frequency increases the
switching losses in the MOSFETs, since losses are a
function of VIN2. Knowing the maximum input voltage and
budget for MOSFET switches usually dictates where the
design ends up. It is recommended that the two outputs
are designed to operate at frequencies approximately
25% apart to avoid any possible interaction. It is also
recommended that the higher frequency output is the
lower output voltage output, since this will tend to have
lower output ripple and tighter specifications. The
default R
tON values of 1MΩ and 649kΩ are suggested
as a starting point, but these are not set in stone. The
first thing to do is to calculate the on-time, t
ON, at VIN(MIN)
and V
IN(MAX), since this depends only upon VIN, VOUT and
R
tON. For VOUT < 3.3V:
()
s
10
50
V
V
10
37
R
10
3
.
3
t
9
)
MIN
(
IN
OUT
3
tON
12
)
MIN
(
VIN
_
ON
−
−
•
+
•
•
+
•
•
=
and
()
s
10
50
V
V
10
37
R
10
3
.
3
t
9
)
MAX
(
IN
OUT
3
tON
12
)
MAX
(
VIN
_
ON
−
−
•
+
•
•
+
•
•
=
From these values of t
ON we can calculate the nominal
switching frequency as follows:
()
Hz
t
V
V
f
)
MIN
(
VIN
_
ON
)
MIN
(
IN
OUT
)
MIN
(
VIN
_
SW
•
=
and
()
Hz
t
V
V
f
)
MAX
(
VIN
_
ON
)
MAX
(
IN
OUT
)
MAX
(
VIN
_
SW
•
=
t
ON is generated by a one-shot comparator that samples
V
IN via RtON, converting this to a current. This current is
used to charge an internal 3.3pF capacitor to V
OUT. The
equations above reflect this along with any internal com-
ponents or delays that influence t
ON. For our DDR2 VDDQ
example we select R
tON = 1MΩ:
t
ON_VIN(MIN) = 871ns and tON_VIN(MAX) = 350ns
f
SW_VIN(MIN) = 275kHz and fSW_VIN(MAX) = 251kHz
Now that we know t
ON we can calculate suitable values
for the inductor. To do this we select an acceptable
inductor ripple current. The calculations below assume
50% of I
OUT which will give us a starting place.
() ()H
I
5
.
0
t
V
V
L
OUT
)
MIN
(
VIN
_
ON
OUT
)
MIN
(
IN
)
MIN
(
VIN
•
•
−
=
and
() ()H
I
5
.
0
t
V
V
L
OUT
)
MAX
(
VIN
_
ON
OUT
)
MAX
(
IN
)
MAX
(
VIN
•
•
−
=
For our DDR2 VDDQ example:
L
VIN(MIN) = 1µH and LVIN(MAX) = 1.3µH
We will select an inductor value of 2.4µH to reduce the
ripple current, which can be calculated as follows:
()
P
P
)
MIN
(
VIN
_
ON
OUT
)
MIN
(
IN
)
MIN
(
VIN
_
RIPPLE
A
L
t
V
V
I
−
•
−
=
and
()
P
P
)
MAX
(
VIN
_
ON
OUT
)
MAX
(
IN
)
MAX
(
VIN
_
RIPPLE
A
L
t
V
V
I
−
•
−
=



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