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RT8800AGQV 数据表(PDF) 6 Page - Richtek Technology Corporation |
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RT8800AGQV 数据表(HTML) 6 Page - Richtek Technology Corporation |
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6 / 21 page ![]() RT8800A 6 DS8800A-04 August 2007 www.richtek.com All brand name or trademark belong to their owner respectively Parameter Symbol Test Conditions Min Typ Max Units Error Amplifier DC Gain -- 65 -- dB Gain-Bandwidth Product GBW CL = 10pF -- 10 -- MHz Slew Rate SR CL = 10pF -- 8 -- V/ μs Current Sense GM Amplifier Recommended Full Scale Source Current 100 -- -- μA Protection Over-Voltage Trip (VFB – VPI) -- 500 -- mV Power Good PGOOD Output Low Voltage VPGOOD IPGOOD = 4mA -- -- 0.2 V PGOOD Delay TPGOOD_Delay 90% * VOUT to PGOOD_H 4 -- 8 ms Note 1. Stresses listed as the above "Absolute Maximum Ratings" may cause permanent damage to the device. These are for stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability. Note 2. Devices are ESD sensitive. Handling precaution recommended. Note 3. The device is not guaranteed to function outside its operating conditions. Note 4. θJA is measured in the natural convection at TA = 25°C on a low effective thermal conductivity test board of JEDEC 51-3 thermal measurement standard. |
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