ADS1675

SBAS416D – DECEMBER 2008 – REVISED AUGUST 2010

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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PACKAGE/ORDERING INFORMATION

For the most current package and ordering information, see the Package Option Addendum at the end of this

document, or visit the device product folder at ti.com.

ABSOLUTE MAXIMUM RATINGS

(1)

Over operating free-air temperature range, unless otherwise noted.

PARAMETER

ADS1675

UNIT

AVDD to AGND

–0.3 to +5.5

V

DVDD to DGND

–0.3 to +3.6

V

AGND to DGND

–0.3 to +0.3

V

Momentary

100

mA

Input current

Continuous

10

mA

Analog I/O to AGND

–0.3 to AVDD +0.3

V

Digital I/O to DGND

–0.3 to DVDD +0.3

V

Maximum junction temperature

+150

°C

Operating temperature range

–40 to +85

°C

Storage temperature range

–60 to +150

°C

(1)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may

degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those specified is not implied.

2

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