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STM32L4P5CE 数据表(PDF) 172 Page - STMicroelectronics |
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STM32L4P5CE 数据表(HTML) 172 Page - STMicroelectronics |
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172 / 311 page ![]() IDD (Standby with RTC) Supply current in Standby mode (backup registers retained), RTC enabled RTC clocked by LSE bypassed at 32768 Hz ENULP = 1 LPCAL = 1 LSESYSDIS =1 1.8 V 84 370 - - - - - - - - nA 2.4 V 135 515 - - - - - - - - 3 V 195 690 - - - - - - - - 3.6 V 285 940 - - - - - - - - RTC clocked by LSE quartz(2) in Low-drive mode 1.8 V 560 810 2200 5350 13500 - - - - - 2.4 V 755 1050 2650 6300 15500 - - - - - 3 V 1000 1350 3200 7550 18500 - - - - - 3.6 V 1300 1750 4050 9250 22000 - - - - - RTC clocked by LSE quartz(2) in Low-drive mode ENULP=1 LPCAL = 1 LSESYSDIS =1 1.8 V 190 470 - - - - - - - - 2.4 V 230 595 - - - - - - - - 3 V 280 765 - - - - - - - - 3.6 V 380 1000 - - - - - - - - IDD (SRAM2 4 KBytes)(3) Supply current in Standby mode when 4 Kbytes of SRAM2 are retained - 1.8 V 200 - - - - - - - - - 2.4 V 210 - - - - - - - - - 3 V 230 - - - - - - - - - 3.6 V 265 - - - - - - - - - IDD (SRAM2 64 Kbytes)(3) Supply current in Standby mode when the full 64 Kbytes of SRAM2 are retained - 1.8 V 529 - - - - - - - - - 2.4 V 540 - - - - - - - - - 3 V 556 - - - - - - - - - 3.6 V 600 - - - - - - - - - IDD (wakeup from Standby) Supply current during wakeup from Standby mode Wakeup clock is MSI = 4 MHz(4) 3 V 1.52 - - - - - - - - - mA 1. Guaranteed by characterization results, unless otherwise specified. Table 48. Current consumption in Standby mode (continued) Symbol Parameter Conditions TYP MAX(1) Unit - VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C |
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