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STM32L4P5CE 数据表(PDF) 174 Page - STMicroelectronics |
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STM32L4P5CE 数据表(HTML) 174 Page - STMicroelectronics |
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174 / 311 page  3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 52: Low-power mode wakeup timings. Table 50. Current consumption in VBAT mode Symbol Parameter Conditions TYP MAX Unit - VBAT 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C IDD(VBAT) Backup domain supply current RTC disabled 1.8 V 3 24 155 475 1350 - ---- nA 2.4 V 3 28 180 540 1500 - ---- 3 V 4 36 220 665 1850 - ---- 3.6 V 12 78 465 1450 4050 - ---- RTC enabled and clocked by LSE bypassed at 32768 Hz 1.8 V 345 375 525 865 - - ---- 2.4 V 540 585 760 1150 -- ---- 3 V 780 835 1050 1550 - - ---- 3.6 V 1050 1100 1450 2400 - - ---- RTC enabled and clocked by LSE quartz(1) 1.8 V 450 - ---- ---- 2.4 V 635 - ---- ---- 3 V 865 - ---- ---- 3.6 V 1150 - ---- ---- RTC enabled and clocked by LSE quartz(1) LPCAL = 1 LSESYSDIS =1 1.8 V 150 - ---- ---- 2.4 V 165 - ---- ---- 3 V 195 - ---- ---- 3.6 V 240 - ---- ---- 1. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. |
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