STM32F427AI datasheet(106/240 Pages) STMICROELECTRONICS

106 / 240 page

Electrical characteristics

STM32F427xx STM32F429xx

106/240

DS9405 Rev 12

Table 28. Typical and maximum current consumptions in Standby mode

Symbol

Parameter

Conditions

Typ(1)

Max(2)

Unit

TA = 25 °C

TA =

25 °C

TA =

85 °C

TA =

105 °C

VDD =

1.7 V

VDD=

2.4 V

VDD =

3.3 V

VDD = 3.6 V

IDD_STBY

Supply current

in Standby

mode

Backup SRAM ON, low-speed

oscillator (LSE) and RTC ON

2.80

3.00

3.60

7.00

19.00

36.00

µA

Backup SRAM OFF, low-

speed oscillator (LSE) and

RTC ON

2.30

2.60

3.10

6.00

16.00

31.00

Backup SRAM ON, RTC and

LSE OFF

2.30

2.50

2.90

6.00(3) 18.00(3) 35.00(3)

Backup SRAM OFF, RTC and

LSE OFF

1.70

1.90

2.20

5.00(3) 15.00(3) 30.00(3)

1. The typical current consumption values are given with PDR OFF (internal reset OFF). When the PDR is OFF (internal reset

OFF), the typical current consumption is reduced by an additional 1.2 µA.

2. Evaluated by characterization, not tested in production unless otherwise specified.

3. Based on characterization, tested in production.

Table 29. Typical and maximum current consumptions in VBAT mode

Symbol

Parameter

Conditions(1)

Typ

Max(2)

Unit

TA = 25 °C

TA = 85 °C

TA =

105 °C

VBAT =

1.7 V

VBAT=

2.4 V

VBAT =

3.3 V

VBAT = 3.6 V

IDD_VBAT

Backup

domain supply

current

Backup SRAM ON, low-speed

oscillator (LSE) and RTC ON

1.28

1.40

1.62

µA

Backup SRAM OFF, low-speed

oscillator (LSE) and RTC ON

0.66

0.76

0.97

Backup SRAM ON, RTC and

LSE OFF

0.70

0.72

0.74

Backup SRAM OFF, RTC and

LSE OFF

0.10

1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.

2. Evaluated by characterization.

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