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STM32F427AI 数据表(PDF) 122 Page - STMicroelectronics |
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STM32F427AI 数据表(HTML) 122 Page - STMicroelectronics |
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122 / 240 page  Electrical characteristics STM32F427xx STM32F429xx 122/240 DS9405 Rev 12 Figure 30. Typical application with a 32.768 kHz crystal 6.3.10 Internal clock source characteristics The parameters given in Table 41 and Table 42 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 17. High-speed internal (HSI) RC oscillator ai17531 OSC32_OU T OSC32_IN fLSE CL1 RF STM32F 32.768 kH z resonator Resonator with integrated capacitors Bias controlled gain CL2 Table 41. HSI oscillator characteristics (1) 1. VDD = 3.3 V, PLL OFF, TA = –40 to 125 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHSI HSI user-trimming step (2) 2. Specified by design. -- - 1 % Accuracy of the HSI oscillator TA = –40 to 105 °C(3) 3. Evaluated by characterization results. − 8-4.5 % TA = –10 to 85 °C(3) − 4- 4 % TA = 25 °C(4) 4. Factory calibrated, parts not soldered. − 1- 1 % tsu(HSI)(2) HSI oscillator startup time - - 2.2 4 µs IDD(HSI)(2) HSI oscillator power consumption - - 60 80 µA |
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