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STM32F427AI 数据表(PDF) 188 Page - STMicroelectronics |
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STM32F427AI 数据表(HTML) 188 Page - STMicroelectronics |
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188 / 240 page ![]() Electrical characteristics STM32F427xx STM32F429xx 188/240 DS9405 Rev 12 Figure 69. NAND controller waveforms for read access 1. y= 7 or 15 depending on the NAND flash memory interface. Figure 70. NAND controller waveforms for write access 2. y= 7 or 15 depending on the NAND flash memory interface. N Table 101. Switching characteristics for NAND Flash read cycles(1) 1. CL = 30 pF. Symbol Parameter Min Max Unit tw(N0E) FMC_NOE low width 4THCLK − 0.5 4THCLK+0.5 ns tsu(D-NOE) FMC_D[15-0] valid data before FMC_NOE high 9 - ns th(NOE-D) FMC_D[15-0] valid data after FMC_NOE high 0 - ns td(ALE-NOE) FMC_ALE valid before FMC_NOE low - 3THCLK − 0.5 ns th(NOE-ALE) FMC_NWE high to FMC_ALE invalid 3THCLK − 2- ns MSv73150V1 FMC_NWE FMC_NOE (NRE) FMC_D[y:0] tw(NOE) tsu(D-NOE) th(NOE-D) ALE (FMC_A17) CLE (FMC_A16) FMC_NCEx td(ALE-NOE) th(NOE-ALE) MSv73151V1 tw(NWE) th(NWE-D) tv(NWE-D) FMC_NWE FMC_NOE (NRE) FMC_D[y:0] td(D-NWE) ALE (FMC_A17) CLE (FMC_A16) FMC_NCEx td(ALE-NWE) th(NWE-ALE) |
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