STGF30H65DFB2 datasheet(5/15 Pages) STMICROELECTRONICS

部件名	STGF30H65DFB2

功能描述	Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO‑220FP package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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5 / 15 page

2.1

Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

GADG120220200916MT

125

175

PTOT [W]

°C

VGE≥ 15V, TJ≤175°C

Figure 2. Collector current vs case temperature

GADG120220200917MT

125

175

IC [A]

°C

VGE≥ 15V, TJ≤175°C

Figure 3. Output characteristics (TJ = 25 °C)

GADG111120191427OC25

(A)

VCE (V)

VGE = 7V

VGE = 9V

VGE = 11V

VGE = 13V

VGE = 15V

Figure 4. Output characteristics (TJ = 175 °C)

GADG111120191428OC175

(A)

VCE (V)

VGE = 7V

VGE = 9V

VGE = 11V

VGE = 13V

VGE = 15V

Figure 5. VCE(sat) vs junction temperature

GADG111120191429VCET

2.8

2.4

2.0

1.6

1.2

0.8

-50

100

150

TJ (°C)

IC = 15 A

IC = 30 A

IC = 60 A

VGE = 15 V

VCE(sat)

(V)

Figure 6. VCE(sat) vs collector current

GADG111120191430VCEC

3.2

2.8

2.4

2.0

1.6

1.2

0.8

IC (A)

VCE(sat)

(V)

TJ = -40°C

TJ = 25°C

TJ = 175°C

STGF30H65DFB2

Electrical characteristics (curves)

DS13256 - Rev 2

page 5/15

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