STGF30H65DFB2 datasheet(3/15 Pages) STMICROELECTRONICS

部件名	STGF30H65DFB2

功能描述	Trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO‑220FP package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 1 mA

650

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 30 A

1.65

2.1

VGE = 15 V, IC = 30 A, TJ = 125 °C

1.85

VGE = 15 V, IC = 30 A, TJ = 175 °C

2.0

Forward on-voltage

IF = 30 A

1.80

2.8

IF = 30 A, TJ = 125 °C

1.60

IF = 30 A, TJ = 175 °C

1.50

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

±250

Table 4. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

1570

Coes

Output capacitance

Cres

Reverse transfer capacitance

Total gate charge

VCC = 520 V, IC = 30 A, VGE = 0 to 15 V

(see Figure 28. Gate charge test circuit)

Qge

Gate-emitter charge

15.3

Qgc

Gate-collector charge

41.5

STGF30H65DFB2

Electrical characteristics

DS13256 - Rev 2

page 3/15

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