Figure 7. Forward bias safe operating area

GADG120220201030SOA

101

100

100

101

102

ID

(A)

VDS (V)

Single pulse, TC =25°C

TJ ≤175°C, VGE =15V

tp =10µs

tp =100µs

tp =1ms

tp =1µs

Figure 8. Collector current vs switching frequency

GADG120220200925TCH

20

10

0

1

10

100

IC

(A)

f(kHz)

TC =100°C

TC =80°C

Rectangular current shape

(duty cycle=0.5, VCC= 400V, RG=6.8Ω,

VGE=0/15V, TJ=175°C)

Figure 9. Transfer characteristics

75

60

45

30

15

0

5

6

7

8

9

10

IC

(A)

VGE (V)

TJ = 25 °C

TJ = 175 °C

VCE = 6 V

GADG111120191435TCH

Figure 10. Diode VF vs forward current

IGBT140120191350DVF

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0

20

40

60

80

100

VF

(V)

IF (A)

Tj = -40 °C

Tj = 25 °C

Tj = 175 °C

Figure 11. Normalized VGE(th) vs junction temperature

IGBT090420181403NVGE

1.1

1.0

0.9

0.8

0.7

0.6

-50

0

50

100

150

VGE(th)

(norm.)

TJ (°C)

VCE=VGE

IC=1mA

Figure 12. Normalized V(BR)CES vs junction temperature

IGBT090420181404NVBR

1.08

1.04

1.00

0.96

0.92

-50

0

50

100

150

V(BR)CES

(norm.)

TJ (°C)

IC =1mA

STGF30H65DFB2

Electrical characteristics (curves)

DS13256 - Rev 2

page 6/15