Figure 19. Switching times vs collector current

GADG101220191117TCC

10 2

10 1

10 0

0

10

20

30

40

50

60

VCC = 400 V, VGE = 15 V,

RG = 6.8 Ω, TJ = 175 °C

t (ns)

IC (A)

tr

td(off)

td(on)

tf

Figure 20. Switching times vs gate resistance

GADG101220191126TGR

10 2

10 1

10 0

0

10

20

30

40

VCC = 400 V, VGE = 15 V,

IC = 30 A, TJ = 175 °C

tr

td(off)

td(on)

tf

t (ns)

Rg (Ω)

Figure 21. Reverse recovery current vs diode current

slope

GADG101220191130ICS

35

30

25

20

15

250

750

1250 1750 2250 2750 di/dt (A/μs)

Irrm

(A) V

CC = 400 V, VGE = 15 V,

IF = 30 A, TJ = 175 °C

Figure 22. Reverse recovery time vs diode current slope

GADG101220191130TCS

280

260

240

220

200

250

750

1250 1750 2250 2750 di/dt (A/μs)

trr

(ns) V

CC = 400 V, VGE = 15 V,

IF = 30 A, TJ = 175 °C

Figure 23. Reverse recovery charge vs diode current

slope

GADG101220191130QCS

2700

2600

2500

2400

2300

2200

250

750

1250 1750 2250 2750

Qrr

(nC)

di/dt (A/μs)

VCC = 400 V, VGE = 15 V,

IF = 30 A, TJ = 175 °C

Figure 24. Reverse recovery energy vs diode current

slope

GADG101220191131ECS

0.9

0.8

0.7

0.6

0.5

250

750

1250 1750 2250 2750 di/dt (A/μs)

VCC = 400 V, VGE = 15 V,

IF = 30 A, TJ = 175 °C

Err

(mJ)

STGF30H65DFB2

Electrical characteristics (curves)

DS13256 - Rev 2

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