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STGF30H65DFB2 数据表(PDF) 2 Page - STMicroelectronics |
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STGF30H65DFB2 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 15 page ![]() 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0 V) 650 V IC(1) Continuous collector current at TC = 25 °C 50 A Continuous collector current at TC = 100 °C 30 A ICP(2)(3) Pulsed collector current 90 A VGE Gate-emitter voltage ±20 V Transient gate-emitter voltage (tp ≤ 10 μs) ±30 IF(1) Continuous forward current at TC = 25 °C 41 A Continuous forward current at TC = 100 °C 24 IFP(2)(3) Pulsed forward current 90 A VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1s, TC = 25°C) 2.5 kV PTOT Total power dissipation at TC = 25 °C 50 W Tstg Storage temperature range -55 to 150 °C TJ Operating junction temperature range -55 to 175 °C 1. Limited by maximum junction temperature. 2. Pulse width is limited by maximum junction temperature. 3. Defined by design, not subject to production test. Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 3 °C/W Thermal resistance junction-case diode 5.8 RthJA Thermal resistance junction-ambient 62.5 STGF30H65DFB2 Electrical ratings DS13256 - Rev 2 page 2/15 |
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