Figure 13. Capacitance variations

GADG111120191436CVR

1000

100

10

1

0.1

1

10

100

C

(pF)

VCE (V)

Cies

Coes

Cres

f = 1 MHz

Figure 14. Gate charge vs gate-emitter voltage

GADG111120191438GCGE

15

12

9

6

3

0

0

20

40

60

80

100

VGE

(V)

Qg (nC)

VCC = 520 V, IC = 30 A, IG = 6 mA

Figure 15. Switching energy vs collector current

GADG101220191115ECC

2.0

1.5

1.0

0.5

0.0

0

10

20

30

40

50

60

E

(mJ)

IC (A)

VCC = 400 V, RG = 6.8 Ω,

VGE = 15 V, TJ = 175 °C

Etot

Eoff

Eon

Figure 16. Switching energy vs temperature

GADG101220191322SET

1.0

0.8

0.6

0.4

0.2

0.0

0

50

100

150

Tj (°C)

E

(mJ) VCC = 400 V, IC = 30 A

RG = 6.8 Ω, VGE = 15 V

Etot

Eoff

Eon

Figure 17. Switching energy vs collector emitter voltage

GADG101220191115ECV

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

150

250

350

450

IC = 30 A, RG = 6.8 Ω,

VGE = 15 V, TJ = 175 °C

Etot

Eoff

Eon

E

(mJ)

VCE (V)

Figure 18. Switching energy vs gate resistance

GADG101220191116EGR

1.5

1.0

0.5

0.0

0

10

20

30

40

IC = 30 A, VCC = 400 V,

VGE = 15 V, TJ = 175 °C

Etot

Eoff

Eon

Rg (Ω)

E

(mJ)

STGF30H65DFB2

Electrical characteristics (curves)

DS13256 - Rev 2

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