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M36DR232 数据表(PDF) 24 Page - STMicroelectronics |
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M36DR232 数据表(HTML) 24 Page - STMicroelectronics |
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24 / 46 page ![]() M36D232A, M36DR232B 24/46 Table 24. DC Characteristics (TA = –40 to 85°C; VDDF =VDDS = 1.65V to 2.2V) Symbol Parameter Device Test Condition Min Typ Max Unit ILI Input Leakage Current Flash & SRAM 0V ≤ VIN ≤ VDD ±2 µA ILO Output Leakage Current Flash & SRAM 0V ≤ VOUT ≤ VDD ±10 µA IDDS VDD Standby Current Flash EF =VDDF ± 0.2V VDDF =VDD max 15 50 µA SRAM E1S ≥ VDDS – 0.2V, E2S ≤ VDDS – 0.2V, VIN ≥ VDDS – 0.2V or VIN ≤ VDDS – 0.2V, f=0 10 50 µA IDDD Supply Current (Reset) Flash RPF =VSSF ± 0.2V 210 µA IDD Supply Current SRAM IIO = 0 mA, E1S =VIL, E2S = WS =VIH, VIN =VIL or VIH,VDDS =VDD max, cycle time = 1µs 12 mA IIO = 0 mA, E1S =VIL, E2S = WS =VIH, VIN =VIL or VIH,VDDS =VDD max, min cycle time 37 mA IDDR Supply Current (Read) Flash EF =VIL,GF = VIH,f =5MHz 10 20 mA IDDW Supply Current (Program) Flash Program in progress 10 20 mA IDDWD Supply Current (Dual Bank) Flash Program/Erase in progress in one bank Read in the other bank 20 40 mA IDDE Supply Current (Erase) Flash Erase in progress 10 20 mA IDDES (1) Supply Current (Erase Suspend) Flash Erase Suspend in progress 50 µA IDDWS (1) Supply Current (Program Suspend) Flash Program Suspend in progress 50 µA IPPS Program Current (Standby) Flash VPPF ≤ VDDS 0.2 5 µA VPPF = 12V ± 0.6V 100 400 µA IPPR Program Current (Read) Flash VPPF ≤ VDDS 0.2 5 µA VPPF = 12V ± 0.6V 100 400 µA IPPW Program Current (Program) Flash VPPF = 12V ± 0.6V Program in progress 510 mA IPPE Program Current (Erase) Flash VPPF = 12V ± 0.6V Program in progress 510 mA VIL Input Low Voltage Flash & SRAM –0.5 0.4 V VIH Input High Voltage Flash & SRAM 1.4 VDD +0.2 V VOL Output Low Voltage Flash & SRAM VDDF =VDDS =VDD min IOL = 100µA 0.2 V VOH Output High Voltage Flash & SRAM VDDF =VDDS =VDD min IOH = –100µA VDD –0.1 V |
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