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M36DR232 数据表(PDF) 35 Page - STMicroelectronics

部件名 M36DR232
功能描述  32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
PDF  46 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M36DR232 数据表(HTML) 35 Page - STMicroelectronics

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M36D232A, M36DR232B
Table 31. SRAM Read AC Characteristics
(TA = –40 to 85°C; VDDS = 1.65V to 2.2V)
Note: 1. Sampled only. Not 100% tested.
Figure 16. SRAM Read Mode AC Waveforms, Address Controlled with UBS =LBS =VIL
Note: E1S = Low, E2S = High, GS =Low, WS = High.
Symbol
Alt
Parameter
SRAM
Unit
Min
Max
tAVAV
tRC
Read Cycle Time
70
ns
tAVQV
tAA
Address Valid to Output Valid
70
ns
tAXQX
tOH
Address Transition to Output Transition
10
ns
tBHQZ
tBHZ
UBS, LBS Disable to Hi-Z Output
25
ns
tBLQV
tBA
UBS, LBS Access Time
70
ns
tBLQX
tBLZ
UBS, LBS Enable to Low-Z Output
5
ns
tE1HQZ
tHZ1
Chip Enable 1 High to Output Hi-Z
25
ns
tE1LQV
tCO1
Chip Enable 1 Low to Output Valid
70
ns
tE1LQX
tLZ1
Chip Enable 1 Low to Output Transition
10
ns
tE2HQV
tCO2
Chip Enable 2 High to Output Valid
70
ns
tE2HQX
tLZ2
Chip Enable 2 High to Output Transition
10
ns
tE2LQZ
tHZ2
Chip Enable 2 Low to Output Hi-Z
25
ns
tGHQZ
tOHZ
Output Enable High to Output Hi-Z
25
ns
tGLQV
tOE
Output Enable Low to Output Valid
35
ns
tGLQX
tOLZ
Output Enable Low to Output Transition
5
ns
tPD
(1)
Chip Enable 1 High or Chip Enable 2 Low to Power
Down
70
ns
tPU
(1)
Chip Enable 1 Low or Chip Enable 2 High to Power Up
0
ns
AI04115
tAVAV
tAVQV
tAXQX
A0-A16
DQ0-DQ15
VALID
DATA VALID
DATA VALID
PROCED



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