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M36D232A, M36DR232B

Table 29. Flash Program, Erase Times and Program, Erase Endurance Cycles

Note: 1. Max values refer to the maximum time allowed by the internal algorithm before error bit is set. Worst case conditions program or

erase should perform significantly better.

2. Excludes the time needed to execute the sequence for program instruction.

Note: 1. All other timings are defined in Read AC Characteristics table.

Parameter

Min

Typ

Typical after

100k W/E Cycles

Unit

Parameter Block (4 KWord) Erase (Preprogrammed)

2.5

0.15

0.4

s

Main Block (32 KWord) Erase (Preprogrammed)

10

1

3

s

Bank Erase (Preprogrammed, Bank A)

2

6

s

Bank Erase (Preprogrammed, Bank B)

10

30

s

20

25

s

(2)

10

s

Word Program

200

10

10

µs

Program/Erase Cycles (per Block)

100,000

cycles

Symbol

Parameter

Flash

Unit

Min

Max

Chip Enable High to DQ7 Valid (Program, EF Controlled)

10

200

µs

Chip Enable High to DQ7 Valid (Block Erase, EF Controlled)

1

10

s

Chip Enable High to Output Valid (Program)

10

200

µs

Chip Enable High to Output Valid (Block Erase)

1

10

s

Q7 Valid to Output Valid (Data Polling)

0

ns

Write Enable High to DQ7 Valid (Program, WF Controlled)

10

200

µs

Write Enable High to DQ7 Valid (Block Erase, WF

Controlled)

110

s

Write Enable High to Output Valid (Program)

10

200

µs

Write Enable High to Output Valid (Block Erase)

1

10

s