M36DR232 datasheet(40/46 Pages) STMICROELECTRONICS

部件名	M36DR232

功能描述	32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product

PDF	46 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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40 / 46 page

M36D232A, M36DR232B

40/46

Table 33. SRAM Low VCCS Data Retention Characteristics

(1, 2)

(TA = –40 to 85°C; VDDS = 1.65V to 2.2V)

Note: 1. All other Inputs VIH ≤ VDD–0.2V orVIL ≤ 0.2V.

2. Sampled only. Not 100% tested.

Figure 23. SRAM Low VDDS Data Retention AC Waveforms, E1S Controlled

Figure 24. SRAM Low VDDS Data Retention AC Waveforms, E2S Controlled

Symbol

Parameter

Test Condition

Min

Max

Unit

IDDDR

Supply Current (Data Retention)

VDDS = 1.0V, E1S ≥ VDDS – 0.2V,

E2S

≥ VDDS – 0.2V or E2S ≤ 0.2V, f = 0

µA

VDR

Supply Voltage (Data Retention)

E1S

≥ VDDS – 0.2V, E2S ≤ 0.2V, f = 0

12.3

tCDR

Chip Disable to Power Down

E1S

≥ VCCS – 0.2V, E2S ≤ 0.2V, f = 0

0ns

Operation Recovery Time

tRC

AI90224

1.65 V

E1S

tCDR

E1S

≥ VDDS – 0.2V

1.2 V

VDR

VSSS

VDDS

DATA RETENTION MODE

AI90225

1.65 V

E2S

tCDR

E2S

≤ 0.2V

VDR

VSSS

VDDS

DATA RETENTION MODE

0.4 V

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