M36DR232 datasheet(37/46 Pages) STMICROELECTRONICS

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M36D232A, M36DR232B

Table 32. SRAM Write AC Characteristics

(TA = –40 to 85°C; VDDS = 1.65V to 2.2V)

Note: 1. tAS is measured from the address valid to the beginning of write.

2. tWR is measured from the end or write to the address change. tWR appliedincaseawrite ends as E1S or WS going high.

3. tCW is measured from E1S going low end of write.

4. A Write occurs during the overlap (tWP)of low E1S and low WS. A write begins when E1S goes low and WS goes low with asserting

UBS or LBS for single byte operation or simultaneously asserting UBS and LBS for double byte operation. A write ends at the ear-

liest transition when E1S goes high and WS goes high. The tWP is measured from the beginning of write to the end of write.

Symbol

Alt

Parameter

SRAM

Unit

Min

Max

tAVAV

tWC

Write Cycle Time

tAVE1L

tAS

(1)

Address Valid to Chip Enable 1 Low

tAVE2H

tAS

(1)

Address Valid to Chip Enable 2 High

tAVWH

tAW

Address Valid to Write Enable High

tAVWL

tAS

(1)

Address Valid to Write Enable Low

tBLWH

tBW

UBS, LBS Valid to End of Write

tDVE1H

tDW

Input Valid to Chip Enable 1 High

tDVE2L

tDW

Input Valid to Chip Enable 2 Low

tDVWH

tDW

Input Valid to Write Enable High

tE1HAX

tWR

(2)

Chip Enable 1 High to Address Transition

tE1LWH,

tE2HWH

tCW

(3)

Chip Select to End of Write

tE2LAX

tWR

(2)

Chip Enable 2 Low to Address Transition

tGHQZ

tGHZ

Output Enable Higt to Output Hi-Z

tWHAX

tWR

(2)

Write Enable High to Address Transition

tWHDX

tDH

Write Enable High to Input Transition

tWHQX

tOW

Write Enable High to Output Transition

tWLQZ

tWHZ

Write Enable Low to Output Hi-Z

tWLWH

tWP

(4)

Write Enable Pulse Width

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