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M36DR232 数据表(PDF) 4 Page - STMicroelectronics

部件名 M36DR232
功能描述  32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
PDF  46 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M36DR232 数据表(HTML) 4 Page - STMicroelectronics

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M36D232A, M36DR232B
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Table 2. Absolute Maximum Ratings (1)
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum voltage may undershoot to –2V during transition and for less than 20ns.
3. Depends on range.
4. VDD =VDDS =VDDF.
Figure 4. Functional Block Diagram
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature (3)
–40 to 85
°C
TBIAS
Temperature Under Bias
–40 to 125
°C
TSTG
Storage Temperature
–55 to 150
°C
VIO
(2)
Input or Output Voltage
–0.2 to VDD
(4) +0.3
V
VDDF
Flash Chip Supply Voltage
–0.5 to 2.7
V
VDDS
SRAM Chip Supply Voltage
–0.2 to 2.6
V
VPPF
Program Voltage
–0.5 to 13.0
V
AI05441
Flash Memory
32 Mbit (x16)
VSSF
EF
GF
WF
RPF
WPF
E1S
E2S
GS
WS
UBS
LBS
DQ0-DQ15
VDDF
VPPF
A17-A20
A0-A16
SRAM
2 Mbit (x16)
VSSS
VDDS



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