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M39832 数据表(PDF) 16 Page - STMicroelectronics |
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M39832 数据表(HTML) 16 Page - STMicroelectronics |
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16 / 36 page ![]() READ DQ2, DQ5 & DQ6 START READ DQ2, DQ6 FAIL PASS AI01873 DQ2, DQ6 = TOGGLE NO NO YES YES DQ5 = 1 NO YES DQ2, DQ6 = TOGGLE Figure 7B. Flash ata Toggle Flowchart READ DQ5 & DQ6 START READ DQ6 FAIL PASS AI01370 DQ6 = TOGGLE NO NO YES YES DQ5 = 1 NO YES DQ6 = TOGGLE Figure 7A. Data Toggle Flowchart Toggle Bit, DQ2 (Flash array only). This toggle bit, together with DQ6, can be used to determine the device status during the Erase operations. It can also be used to identify the block being erased. During Erase or Erase Suspend a read from a block being erased will cause DQ2 to toggle. A read from a block not being erased will set DQ2 to ’1’ during erase and to DQ2 during Erase Suspend. During Flash Array Erase, a read operation will cause DQ2 to toggle as all blocks are being erased. DQ2 will be set to ’1’ during program operation and when erase is complete. After erase completion and if the error bit DQ5 is set to ’1’, DQ2 will toggle if the faulty block is addressed. Error flag, DQ5 (Flash block only). This bit is set to ’1’ by the internal logic when there is a failure of programming, block erase, or chip erase that re- sults in invalid data in the memory block. In case of an error in block erase or program, the block in which the error occured or to which the pro- grammed data belongs, must be discarded. The DQ5 failure condition will also appear if a user tries to program a ’1’ to a location that is previously programmed to ’0’. Other Blocks may still be used. The error bit resets after a Read/Reset (RD) in- struction. In case of success of Program or Erase, the error bit will be set to ’0’ . when A0 is High with A1 Low. Erase Timer Bit, DQ3 (Flash array only). This bit is set to ’0’ by internal logic when the last block Erase command has been entered to the Com- mand Interface and it is awaiting the Erase start. When the erase timeout period is finished, after 50ms to 90ms, DQ3 returns to ’1’. WRITE a BYTE (or a PAGE) in EEPROM It should be noticed that writing in the EEPROM array is an operation, it is not an instruction (as for Programming a byte in the Flash array). Write a Byte in EEPROM Array A write operation is initiated when Chip Enable EE is Low and Write Enable W is Low with Output 16/36 M39832 |
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