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M39832 数据表(PDF) 22 Page - STMicroelectronics |
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M39832 数据表(HTML) 22 Page - STMicroelectronics |
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22 / 36 page ![]() Under these conditions, reading the data output will yield 01h if the block defined by the inputs on A12-A18 is protected. Any attempt to program or erase a protected block will be ignored by the device. Remarks: – The Verify operation is a read with a simulated worst case conditions. This allows a guarantee of the retention of the Protection status – During the application life, the block protection status can be accessed with a regular Read instruction without applying a "high voltage" VID on A9. This instruction is detailed in Table 5 and Table 8. Blocks Unprotection (See Figure 9). All protected blocks can be unprotected simultaneously on pro- gramming equipment to allow updating of bit con- tents. All blocks must first be protected before the unprotection operation. Block unprotection is acti- vated when A9, G and E are at VID and A12, A15 at VIH. Unprotection is initiated by the edge of W falling to VIL. After a delay of 10ms, the unprotection operation will end. Unprotection verify is achieved by bringing G and E to VIL while A0 is at VIL, A6 and A1 are at VIH and A9 remains at VID. In these conditions, reading the output data will yield 00h if the block defined by the inputs A12-A18 has been succesfully unprotected. Each block must be sepa- rately verified by giving its address in order to ensure that it has been unprotected. Remarks: – The Verify operation is a read with a simulated worst case conditions. This allows a guarantee of the retention of the Protection status – During the application life, the Block protection status can be accessed with a regular Read instruction without "high voltage" VID on A9. This instruction is detailed in Table 5 and Table 8. Block Temporary Unprotection. Any previously protected block can be temporarily unprotected in order to change stored data. The temporary un- protection mode is activated by bringing RP to VID. During the temporary unprotection mode the pre- viously protected blocks are unprotected. A block can be selected and data can be modified by executing the Erase or Program instruction with the RP signal held at VID. When RP is returned to VIH, all the previously protected blocks are again pro- tected. Read/Reset (RD) Instruction. The Read/Reset instruction consists of one write cycle giving the command F0h. It can be optionally preceded by the two Coded cycles. Subsequent read operations will read the memory array addressed and output the data read. A wait state of 10ms is necessary after Read/Reset prior to any valid read if the memory was in an Erase mode when the RD instruction is given. GLOSSARY Array: EEPROM array (256 Kbit) or Flash array (8 Mbit) Block: part of the Flash array (See Figure 3A and 3B). Page: 64 bytes of EEPROM Write and Program: Writing (into the EEPROM array) and programming (the Flash array is not performed in a similar way: – the Flash memory requires an instruction (see Instruction chapter) for Erasing and another in- struction for Programming one (or more) byte(s) or word(s) – the EEPROM memory is directly written with a simple operation (see Operation chapter). SDP: Software Data Protection. Used for protect- ing the EEPROM array against false Write opera- tions (as in noisy environments). POWER SUPPLY and CURRENT CONSUMP- TION Power Up. The M39832 internal logic is reset upon a power-up condition to Read memory status. Any Write operation in EEPROM is inhibited during the first 5 ms following the power-up. Either EF, EE or W must be tied to VIH during Power-up for the maximum security of the data contents and to remove the possibility of a byte being written on the first rising edge of EF, EE or W. Any write cycle initiation is locked when Vcc is below VLKO. Supply Rails. Normal precautions must be taken for supply voltage decoupling, each device in a system should have the VCC rail decoupled with a 0.1 µF capacitor close to the VCC and VSS pins. The printed circuit board trace width should be sufficient to carry the VCC program and erase currents re- quired. 22/36 M39832 |
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