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M39832 数据表(PDF) 22 Page - STMicroelectronics

部件名 M39832
功能描述  Single Chip 8 Mbit 1Mb x8 or 512Kb x16 Flash and 256 Kbit Parallel EEPROM Memory
PDF  36 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M39832 数据表(HTML) 22 Page - STMicroelectronics

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Under these conditions, reading the data output will
yield 01h if the block defined by the inputs on
A12-A18 is protected. Any attempt to program or
erase a protected block will be ignored by the
device.
Remarks:
– The Verify operation is a read with a simulated
worst case conditions. This allows a guarantee
of the retention of the Protection status
– During the application life, the block protection
status can be accessed with a regular Read
instruction without applying a "high voltage" VID
on A9. This instruction is detailed in Table 5 and
Table 8.
Blocks Unprotection (See Figure 9). All protected
blocks can be unprotected simultaneously on pro-
gramming equipment to allow updating of bit con-
tents. All blocks must first be protected before the
unprotection operation. Block unprotection is acti-
vated when A9, G and E are at VID and A12, A15
at VIH. Unprotection is initiated by the edge of W
falling to VIL. After a delay of 10ms, the unprotection
operation will end. Unprotection verify is achieved
by bringing G and E to VIL while A0 is at VIL, A6 and
A1 are at VIH and A9 remains at VID. In these
conditions, reading the output data will yield 00h if
the block defined by the inputs A12-A18 has been
succesfully unprotected. Each block must be sepa-
rately verified by giving its address in order to
ensure that it has been unprotected.
Remarks:
– The Verify operation is a read with a simulated
worst case conditions. This allows a guarantee
of the retention of the Protection status
– During the application life, the Block protection
status can be accessed with a regular Read
instruction without "high voltage" VID on A9. This
instruction is detailed in Table 5 and Table 8.
Block Temporary Unprotection. Any previously
protected block can be temporarily unprotected in
order to change stored data. The temporary un-
protection mode is activated by bringing RP to VID.
During the temporary unprotection mode the pre-
viously protected blocks are unprotected. A block
can be selected and data can be modified by
executing the Erase or Program instruction with the
RP signal held at VID. When RP is returned to VIH,
all the previously protected blocks are again pro-
tected.
Read/Reset (RD) Instruction. The Read/Reset
instruction consists of one write cycle giving the
command F0h. It can be optionally preceded by the
two Coded cycles. Subsequent read operations will
read the memory array addressed and output the
data read. A wait state of 10ms is necessary after
Read/Reset prior to any valid read if the memory
was in an Erase mode when the RD instruction is
given.
GLOSSARY
Array: EEPROM array (256 Kbit) or Flash array (8
Mbit)
Block: part of the Flash array (See Figure 3A and
3B).
Page: 64 bytes of EEPROM
Write and Program: Writing (into the EEPROM
array) and programming (the Flash array is not
performed in a similar way:
– the Flash memory requires an instruction (see
Instruction chapter) for Erasing and another in-
struction for Programming one (or more) byte(s)
or word(s)
– the EEPROM memory is directly written with a
simple operation (see Operation chapter).
SDP: Software Data Protection. Used for protect-
ing the EEPROM array against false Write opera-
tions (as in noisy environments).
POWER SUPPLY and CURRENT CONSUMP-
TION
Power Up. The M39832 internal logic is reset upon
a power-up condition to Read memory status. Any
Write operation in EEPROM is inhibited during the
first 5 ms following the power-up.
Either EF, EE or W must be tied to VIH during
Power-up for the maximum security of the data
contents and to remove the possibility of a byte
being written on the first rising edge of EF, EE or
W. Any write cycle initiation is locked when Vcc is
below VLKO.
Supply Rails. Normal precautions must be taken
for supply voltage decoupling, each device in a
system should have the VCC rail decoupled with a
0.1
µF capacitor close to the VCC and VSS pins. The
printed circuit board trace width should be sufficient
to carry the VCC program and erase currents re-
quired.
22/36
M39832



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