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ST7LITE1XB 数据表(PDF) 127 Page - STMicroelectronics

部件名 ST7LITE1XB
功能描述  8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, 5 TIMERS, SPI
PDF  157 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST7LITE1XB 数据表(HTML) 127 Page - STMicroelectronics

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EMC CHARACTERISTICS (Cont’d)
13.7.3 Absolute Maximum Ratings (Electrical
Sensitivity)
Based on two different tests (ESD and LU) using
specific measurement methods, the product is
stressed in order to determine its performance in
terms of electrical sensitivity. For more details, re-
fer to the application note AN1181.
13.7.3.1 Electro-Static Discharge (ESD)
Electro-Static Discharges (a positive then a nega-
tive pulse separated by 1 second) are applied to
the pins of each sample according to each pin
combination. The sample size depends on the
number of supply pins in the device (3 parts*(n+1)
supply pin). Two models can be simulated: Human
Body Model and Machine Model. This test con-
forms to the JESD22-A114A/A115A standard.
Absolute Maximum Ratings
Note:
1. Data based on characterization results, not tested in production.
13.7.3.2 Static and Dynamic Latch-Up
LU: 3 complementary static tests are required
on 6 parts to assess the latch-up performance.
A supply overvoltage (applied to each power
supply pin) and a current injection (applied to
each input, output and configurable I/O pin) are
performed on each sample. This test conforms
to the EIA/JESD 78 IC latch-up standard. For
more details, refer to the application note
AN1181.
Electrical Sensitivities
Symbol
Ratings
Conditions
Maximum value 1) Unit
VESD(HBM)
Electro-static discharge voltage
(Human Body Model)
TA=+25°C
8000
V
VESD(MM)
Electro-static discharge voltage
(Machine Model)
TA=+25°C
400
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA=+25°C
TA=+85°C
A
A



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