M58MR032C datasheet(7/52 Pages) STMICROELECTRONICS

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M58MR032C, M58MR032D

Table 4. User Bus Operations (1)

Note: 1. X = Don’t care.

Table 5. Read Electronic Signature (AS and Read CFI instructions) (1)

Note: 1. Addresses are latched on the rising edge of L input.

2. EA means Electronic Signature Address (see Read Electronic Signature)

3. Value during address latch.

Table 6. Read Block Protection (AS and Read CFI instructions) (1)

Note: 1. Addresses are latched on the rising edge of L input.

2. A locked block can be unprotected only with WP at VIH.

3. Value during address latch.

4. BA means Block Address. First cycle command address should indicate the bank of the block address.

Operation

ADQ15-ADQ0

Address Latch

VIL

VIH

VIL

(rising edge)

VIH

Address Input

Write

VIL

VIH

VIL

VIH

Data Input

Output Disable

VIL

VIH

Hi-Z

Standby

VIH

Hi-Z

Reset / Power-down

VIL

Hi-Z

Block Locking

VIL

VIH

VIL

Code

Device

ADQ1 (3)

ADQ0 (3)

Other

Address (2)

ADQ15-0

Manufacturer Code

VIL

VIH

VIL

EA (2)

0020h

Device Code

M58MR032C

VIL

VIH

VIL

VIH

EA (2)

88DAh

M58MR032D

VIL

VIH

VIL

VIH

EA (2)

88DBh

Block Status

ADQ1 (3)

ADQ0 (3)

Other

Address

ADQ15-0

Protected and unlocked

VIL

VIH

VIL

BA (4)

0001

Unprotected and unlocked

VIL

VIH

VIL

BA (4)

0000

Protected and locked

VIL

VIH

VIL

BA (4)

0003

Unprotected and locked (2)

VIL

VIH

VIL

BA (4)

0002

DEVICE OPERATIONS

The following operations can be performed using

the appropriate bus cycles: Address Latch, Read

Array (Random, and Page Modes), Write com-

mand, Output Disable, Standby, reset/Power-

down and Block Locking. See Table 4.

Address Latch. In asynchronous operation, the

address is latched on the rising edge of L input. In

burst mode the address is latched either on the ris-

ing edge of L or on the first rising/falling edge of K

(depending on configuration settings) when L is

low.

Read. Read operations are used to output the

contents of the Memory Array, the Electronic Sig-

nature, the Status Register, the CFI, the Block

Protection Status, the Read Configuration Regis-

ter status and the Protection Register.

Read operation of the Memory Array may be per-

formed in asynchronous page mode or synchro-

nous burst mode. In asynchronous page mode

data is internally read and stored in a page buffer.

The page has a size of 4 words and is addressed

by ADQ0 and ADQ1 address inputs.

According to the device configuration the following

Read operations: Electronic Signature - Status

Configuration Register Status - Protection Regis-

ter must be accessed as asynchronous read or as

single synchronous read (see Figure 4).

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