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M58MR032C 数据表(PDF) 25 Page - STMicroelectronics

部件名 M58MR032C
功能描述  32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
PDF  52 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M58MR032C 数据表(HTML) 25 Page - STMicroelectronics

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M58MR032C, M58MR032D
Table 19. CFI Query System Interface Information
Offset
Data
Description
Value
1Bh
0017h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1.7V
1Ch
0020h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
2V
1Dh
0017h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
1.7V
1Eh
00C0h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
12V
1Fh
0004h
Typical timeout per single byte/word program = 2n µs
16µs
20h
0004h
Typical timeout for tetra word program = 2n µs
16µs
21h
000Ah
Typical timeout per individual block erase = 2n ms
1s
22h
0000h
Typical timeout for full chip erase = 2n ms
NA
23h
0004h
Maximum timeout for word program = 2n times typical
512µs
24h
0004h
Maximum timeout for tetra word = 2n times typical
512µs
25h
0004h
Maximum timeout per individual block erase = 2n times typical
16s
26h
0000h
Maximum timeout for chip erase = 2n times typical
NA



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