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M58MR032C 数据表(PDF) 30 Page - STMicroelectronics

部件名 M58MR032C
功能描述  32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
PDF  52 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M58MR032C 数据表(HTML) 30 Page - STMicroelectronics

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Table 26. DC Characteristics
(TA = –40 to 85°C; VDD = VDDQ = 1.7V to 2.0V)
Note: 1. Sampled only, not 100% tested.
2. VPP may be connected to 12V power supply for a total of less than 100 hrs.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VDDQ
±1
µA
ILO
Output Leakage Current
0V
≤ VOUT ≤ VDDQ
±5
µA
ICC1
Supply Current
(Asynchronous Read Mode)
E = VIL, G = VIH, f = 6MHz
10
20
mA
Supply Current
(Synchronous Read Mode
Continuous Burst)
E = VIL, G = VIH, f = 40MHz
20
30
mA
ICC2
Supply Current
(Power-down)
RP = VSS ± 0.2V
210
µA
ICC3
Supply Current (Standby)
E = VDD ± 0.2V
15
50
µA
ICC4
(1)
Supply Current
(Program or Erase)
Word Program, Block Erase
in progress
10
20
mA
ICC5
(1)
Supply Current
(Dual Bank)
Program/Erase in progress
in one Bank, Asynchronous
Read in the other Bank
20
40
mA
Program/Erase in progress
in one Bank, Synchronous
Read in the other Bank
30
50
mA
IPP1
VPP Supply Current (Program
or Erase)
VPP = 12V ± 0.6V
510
mA
IPP2
VPP Supply Current (Standby
or Read)
VPP ≤ VCC
0.2
5
µA
VPP = 12V ± 0.6V
100
400
µA
VIL
Input Low Voltage
–0.5
0.4
V
VIH
Input High Voltage
VDDQ –0.4
VDDQ + 0.4
V
VOL
Output Low Voltage
IOL = 100µA
0.1
V
VOH
Output High Voltage CMOS
IOH = –100µA
VDDQ –0.1
V
VPP1
VPP Supply Voltage
Program, Erase
VDDQ –0.4
VDDQ + 0.4
V
VPPH
VPP Supply Voltage
Double/Tetra Word Program
11.4
12.6
V
VPPLK
Program or Erase Lockout
1
V



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