ST72141K datasheet(126/132 Pages) STMICROELECTRONICS

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ST72141K

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MEMORY AND PERIPHERAL CHARACTERISTICS (Cont’d)

Notes:

1) Unless otherwise specified, typical data is based on TA=25°C and VDD-VSS=5V. This data is provided only for design

guidelines and is not tested.

2) Tested in production at TA=25°C, characterized over all temperature range.

3) ADC Accuracy vs. Negative Injection Current:

For IINJ-=0.8mA, the typical leakage induced inside the die is 1.6µA and the effect on the ADC accuracy is a loss of 1 LSB

by 10K

Ω increase of the external analog source impedance.

These measurement results and recommendations have been done under worst conditions for injection:

- negative injection

- injection to an Input with analog capability, adjacent to the enabled Analog Input

- at 5V VDD supply, and worst case temperature.

4) Data based on characterization results, not tested in production.

ADC Analog to Digital Converter (8-bit)

Symbol

Parameter

Conditions

Min

Typ 1)

Max

Unit

|TUE|

Total unadjusted error 3)

TA=25°C,VDD=VDDA=5V,

fCPU=8MHz

LSB

Offset error 3)

-1

Gain Error 3)

-2

|DLE|

Differential linearity error 3)

|ILE|

Integral linearity error 3)

VAIN

Conversion range voltage

VSSA

VDDA

IADC

A/D conversion supply current

fADC=fCPU=4MHz

VDD=VDDA=5V

1mA

tSTAB

Stabilization time after ADC enable

µs

tLOAD

Sample capacitor loading time

µs

1/fADC

tCONV

Hold conversion time

µs

1/fADC

RAIN

External input resistor

20 4)

Ω

RADC

Internal input resistor

Ω

CSAMPLE Sample capacitor

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