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STLC1511 数据表(PDF) 13 Page - STMicroelectronics

部件名 STLC1511
功能描述  NorthenLite 1.0 G.lite BiCMOS Analog Front-End Circuit
PDF  31 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STLC1511 数据表(HTML) 13 Page - STMicroelectronics

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STLC1511
Table 5. CO PLL Specifications
Unless otherwise noted, typical specifications apply for VCC=5.0 V, temperature=25×C, nominal process and bias
current. Maximum and minimum performance is with VCC ±5%, -40 =< Tjunction =< 105×C, and worst case process.
Description
min
typ
max
Units
Comments
Reference Clock Frequency
2.56
MHz
on pin FREF
Output Clock Frequency
17.644
MHz
at pin DIGREF
LC Frequency Tuning
Rangee
84
88.32
94
MHz
Assumes 2% capacitors.
Oscillator Signal Level
200
500
mVp
Power Up Time
200
msec
VCO Gain
Vco gain (LC)
5.0
5.4
6
MHz/V
see CAPTION FIGURE 4
on page 14
Charge Pump Current
180
200
220
mA
Input Impedance @OSCPB and
OSCNB1
<1>Input and output impedance measured with 50kW from OSCPB to Vcc and OSCNB to Vcc
see TITLE 3 3.4.3 on page
16
Output Impedance @OSCPE
and OSCNEa
see TITLE 3 3.4.3 on page
16
CO Phase Noise at fs
2
5KHz offset
10kHz offset
20kHz offset
30kHz offset
100kHz offset
200kHz offset
300kHz offset
400kHz offset
500kHz offset
<2>For inband noise, phase noise at multiples of 4.3125kHz will rms add to degrade the inband SNR. Similarly, for out of band signals,
phase noise will rms add depending on the offset between the carrier and the band of interest to reduce the SNR. For example,
noise contributions on carriers from 34 to 127 will rms add to degrade the SNR on the edge of the US band (carrier 26).
89
91
97
101
120
129
133
137
141
dBc/Hz
Phase noise at DIGREF
output (i.e. 17.664MHz) in
CO Oscillator mode.



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