PM6670AS datasheet(10/54 Pages) STMICROELECTRONICS

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Electrical characteristics

PM6670AS

10/54

Symbol

Parameter

Test condition

Min

Typ

Max

Unit

Current limit and zero crossing comparator

ICSNS

CSNS input bias current

100

110

µA

Comparator offset

-6

Positive current limit threshold

Rsense = 1 k

Ω

VPGND - VCSNS

100

Fixed negative current limit

threshold

110

VZC,OFFS

Zero crossing comparator

offset

-11

-5

High and low side gate drivers

HGATE driver on-resistance

HGATE high state (pull-up)

2.0

Ω

HGATE low state (pull-down)

1.8

2.7

LGATE driver on-resistance

LGATE high state (pull-up)

1.4

2.1

LGATE low state (pull-down)

0.6

0.9

UVP/OVP protections and PGOOD SIGNAL (SMPS only)

OVP

Over voltage threshold

112

115

118

UVP

Under voltage threshold

PGOOD

Power-good upper threshold

107

110

113

Power-good lower threshold

IPG,LEAK PG leakeage current

PG forced to 5 V

µA

VPG,LOW PG low-level voltage

IPG,SINK = 4 mA

150

250

Soft-start section (SMPS)

Soft-start ramp time

(4 steps current limit)

Soft-start current limit step

µA

Soft-end section

VDDQ discharge resistance

in non-tracking discharge

mode

Ω

VTT discharge resistance in

non-tracking discharge mode

VTTREF discharge

resistance in non-tracking

discharge mode

11.5

Ω

Table 6.

Electrical characteristics (continued)

TA = -25 °C to 85 °C , VCC = AVCC = +5 V and LDOIN connected to VDDQ output if not

otherwise specified (1)

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