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PM6670AS 数据表(PDF) 47 Page - STMicroelectronics

部件名 PM6670AS
功能描述  Complete DDR2/3 memory power supplies controller
PDF  54 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

PM6670AS 数据表(HTML) 47 Page - STMicroelectronics

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PM6670AS
Application information
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8.1.6
VDDQ current limit setting
The valley current limit is set by RCSNS and must be chosen to support the maximum load
current. The valley of the inductor current ILvalley is:
Equation 45
The output current limit depends on the current ripple as shown I Figure 39:
Figure 39. Valley current limit waveforms
As the valley threshold is fixed, the greater the current ripple, the greater the DC output
current will be. If an output current limit greater than ILOAD(max) over all the input voltage
range is required, the minimum current ripple must be considered in the previous formula.
Then the resistor RCSNS is:
Equation 46
where RDSon is the drain-source on-resistance of the low-side switch. Consider the
temperature effect and the worst case value in RDSon calculation (typically +0.4 %/°C).
The accuracy of the valley current also depends on the offset of the internal comparator
(±5 mV).
The negative valley-current limit (if the device works in forced-PWM mode) is given by:
Equation 47
2
I
(max)
I
I
L
LOAD
Lvalley
=
Inductor current
Valley current limit
MAX LOAD 1
MAX LOAD 2
Current
Time
Inductor current
uA
100
I
R
R
Lvalley
DSon
CSNS
=
DSon
NEG
R
mV
120
I
=



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