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PM6670AS 数据表(PDF) 47 Page - STMicroelectronics |
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PM6670AS 数据表(HTML) 47 Page - STMicroelectronics |
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47 / 54 page ![]() PM6670AS Application information 47/54 8.1.6 VDDQ current limit setting The valley current limit is set by RCSNS and must be chosen to support the maximum load current. The valley of the inductor current ILvalley is: Equation 45 The output current limit depends on the current ripple as shown I Figure 39: Figure 39. Valley current limit waveforms As the valley threshold is fixed, the greater the current ripple, the greater the DC output current will be. If an output current limit greater than ILOAD(max) over all the input voltage range is required, the minimum current ripple must be considered in the previous formula. Then the resistor RCSNS is: Equation 46 where RDSon is the drain-source on-resistance of the low-side switch. Consider the temperature effect and the worst case value in RDSon calculation (typically +0.4 %/°C). The accuracy of the valley current also depends on the offset of the internal comparator (±5 mV). The negative valley-current limit (if the device works in forced-PWM mode) is given by: Equation 47 2 I (max) I I L LOAD Lvalley ∆ − = Inductor current Valley current limit MAX LOAD 1 MAX LOAD 2 Current Time Inductor current uA 100 I R R Lvalley DSon CSNS ⋅ = DSon NEG R mV 120 I = |
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