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PM6670AS 数据表(PDF) 35 Page - STMicroelectronics |
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PM6670AS 数据表(HTML) 35 Page - STMicroelectronics |
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35 / 54 page ![]() PM6670AS Device description 35/54 7.1.9 Gate drivers The integrated high-current gate drivers allow using different power MOSFETs. The high- side driver uses a bootstrap circuit which is supplied by the +5 V rail. The BOOT and PHASE pins work respectively as supply and return path for the high-side driver, while the low-side driver is directly fed through VCC and PGND pins. An important feature of the PM6670AS gate drivers is the Adaptive Anti-Cross-Conduction circuitry, which prevents high-side and low-side MOSFETs from being turned on at the same time. When the high-side MOSFET is turned off, the voltage at the PHASE node begins to fall. The low-side MOSFET is turned on only when the voltage at the PHASE node reaches an internal threshold (2.5 V typ.). Similarly, when the low-side MOSFET is turned off, the high-side one remains off until the LGATE pin voltage is above 1 V. The power dissipation of the drivers is a function of the total gate charge of the external power MOSFETs and the switching frequency, as shown in the following equation: Equation 23 The low-side driver has been designed to have a low-resistance pull-down transistor (0.6 Ω typ.) in order to prevent undesired ignition of the low-side MOSFET due to the Miller effect. 7.1.10 Reference voltage and bandgap The 1.237 V internal bandgap reference has a granted accuracy of ±1 % over the 0 °C to 85 °C temperature range. The VREF pin is a buffered replica of the bandgap voltage. It can supply up to ±100 µA and is suitable to set the intermediate level of MODE, DDRSEL and DSCG multifunction pins. A 100 nF (min.) bypass capacitor toward SGND is required to enhance noise rejection. If VREF falls below 0.87 V (typ.), the system detects a fault condition and all the circuitry is turned OFF. An internal divider derives a 0.9 V±1 % voltage (Vr) from the bandgap. This voltage is used as a reference by the switching regulator output. The Over-Voltage Protection, the Under- Voltage Protection and the Power-Good signal are also referred to Vr. SW g DRV D f Q V ) driver ( P ⋅ ⋅ = |
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