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CMS3216LAH 数据表(PDF) 16 Page - FIDELIX |
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CMS3216LAH 数据表(HTML) 16 Page - FIDELIX |
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16 / 46 page ![]() Rev0.2, Jan. 2007 CMS3216LAx-75xx Table 8. IDD Specifications and Conditions [21.22.26.27.]. Note : 21. The minimum specifications are used only to indicate cycle time at which proper operation over the full temperature range (-40°C = TA = +85°C for IT parts) is ensured. 22. An initial pause of 100µs is required after power-up, followed by two AUTO REFRESH commands, before proper device operation is ensured. (VDD and VDDQ must be powered up simultaneously. VSS and VSSQ must be at same potential.) The two AUTO REFRESH command wake-ups should be repeated any time the tREF refresh requirement is exceeded. 23. All states and sequences not shown are illegal or reserved. 24. In addition to meeting the transition rate specification, the clock and CKE must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner. 25. tHZ defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL. The last valid data element will meet tOH before going High-Z. 26. AC timing and IDD tests have VIL and VIH, with timing referenced to VIH/2 = crossover point. If the input transition time is longer than tT (MAX), then the timing is referenced at VIL (MAX) and VIH (MIN) and no longer at the VIH/2 crossover point. 27. IDD specifications are tested after the device is properly initialized. 28. IDD is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time and the outputs open. 29. The IDD current will increase or decrease proportionally according to the amount of frequency alteration for the test condition. 30. Address transitions average one transition every two clocks. 31. Other input signals are allowed to transition no more than once every two clocks and are otherwise at valid VIH or VIL levels. 32. CKE is HIGH during refresh command period tRFC (MIN) else CKE is LOW. The IDD 6 limit is actually a nominal value and does not result in a fail value TA=25℃, f=1Mhz, VDD(typ) Test Conditions pF pF Units CIN Max 6 Output Capacitance COUT Input Capacitance 4 Description Parameter Capacitance AC Test Loads OUTPUT Z0=50 Ω ㎃ 45 Operating Current : Burst Mode ; Continuous Burst ; Read or Write ; All banks Active ; CAS Latency =3[28.29.30.] IDD4 ㎃ 16 Active Standby Current in non Power Down Mode ; CS#=HIGH ; CKE=HIGH ; All banks active after tRCD met ; No access in progress[28.30.31.] IDD3n ㎃ 70 Auto Refresh Current : tRC=tRC(min) CAS Latency=3 ; CKE,CS#=HIGH[28.29.30.32.32.] IDD5 ㎂ 200 Self Refresh Current : CKE <=0.2V, 2 Banks IDD6 ㎂ 150 Self Refresh Current : CKE <=0.2V, 1 Banks ㎂ 10 Deep power down IDD7 ㎃ 12 Precharge Standby Current in non ower down Mode; CKE=HIGH ; All banks Idle IDD2n ㎃ 2 Active Standby Current in Power Down Mode ; CS#=HIGH ; CKE=LOW ; All banks active after tRCD met ; No access in progress[28.30.31.] IDD3p ㎂ ㎃ Units IDD1 -75 300 Precharge Standby Current in Power Down Mode ; CKE=LOW ; All banks Idle IDD2p Operating Current : Active Mode ; Burst =1 ; Read or Write ; tRC= tRC(min); CAS Latency =3 [28.29.30.] 45 Description Parameter 50 Ω 30pF VDDQ/2 |
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