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CMS3216LAH 数据表(PDF) 28 Page - FIDELIX |
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CMS3216LAH 数据表(HTML) 28 Page - FIDELIX |
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28 / 46 page ![]() Rev0.2, Jan. 2007 CMS3216LAx-75xx Figure 11. Read & Write Cycle at Same Bank @Burst Length=4, tDPL =2CLK (100Mhz) Note : 45. Minimum row cycle times is required to complete internal DRAM operation. 46. Row precharge can interrupt burst on any cycle.[CAS Latency -1] number of valid output data is available after Row precharge. Last valid output will be Hi-Z(t SHZ) after the clock. 47. Access time from Row active command. tCC *(tRCD + CAS latency - 1) + tSAC 48. Out put will be Hi-Z after the end of burst. (1,2,3,8 & Full page bit burst) Qa0 Qa1 Qa2 Qa3 Qb0 Qb1 Qb2 Qb3 Don’t Care 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 HIGH CLOCK CKE tRC *note 45. tRCD /CS /RAS /CAS RAa CAa RAb CAb ADDR BS RAb RAa A10/AP CL=2 tOH tSAC tRAC tSHZ *note 48. *note 47. tDPL Qa0 Qa1 Qa2 Qa3 Qb0 Qb1 Qb2 Qb3 tOH tSAC tRAC tSHZ *note 48. *note 47. tDPL CL=3 /WE DQM Row Active (A-Bank) Read (A-Bank) Precharge (A-Bank) Row Active (A-Bank) Write (A-Bank) Precharge (A-Bank) *note 46. DQ tRP |
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