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HT83F40P 数据表(PDF) 15 Page - Holtek Semiconductor Inc |
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HT83F40P 数据表(HTML) 15 Page - Holtek Semiconductor Inc |
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15 / 61 page ![]() HT83FXX Rev. 1.00 15 May 12, 2009 Voice Control and Audio output Registers - DAL, DAH, VOL The devices include a single 12-bit current type DAC function for driving an external 8 W speaker through an external NPN transistor or Power Amplifier. The pro- grammer must writer the voice data to these DAL/DAH registers. The programmer can control the DAC volume with 7-levels via the VOL register. Pulse Width Modulator Registers - PWMC, PWML, PWMH Each device contains a single 12-bit PWM function for driving an external 8 W speaker. The programmer must writer the voice data to PWML/PWMH register. The pro- grammer can control the PWM volume with 8-levels via the VOL register. Serial Interface Module(SIM) Registers - SIMC0, SIMC1, SIMAR/SIMC2, SIMDR Each SIM contains SPI and I 2C function for communi- cating with other microcontroller or SPI Flash Memory. All devices contain an integrated I 2C and SPI bus which interfaces to the external shared pins SDA ,SCL and SCSB ,SCK ,SDI ,SDO with PB on the microcontroller. The I 2C correct setup and data transfer operation of this 2-line bidirectional bus utilizes 4 special function regis- ters. The SIMAR register sets the slave address of the device while the SIMC0 is the control register that en- ables or disables the device as well as select whether it is in I 2C or SPI mode. The SIMC1 register is the I2C sta- tus register while the SIMDR register is the input/output data register. The SPI correct setup and data transfer operation of this 3-line bidirectional bus utilizes 3 special function registers. The SIMC0 is the control register that enables or disables the device as well as select whether it is in I 2C or SPI mode. The SIMC2 register is the SPI status register while the SIMDR register is the input/out- put data register. Flash Data Memory The Data Memory is the location where the user Data is stored. For this device the Data Memory is a Flash type, which means it can be programmed and reprogrammed a large number of times, allowing the user the conve- nience of voice data modification using the same de- vice. By using the appropriate programming tools, these devices offer users the flexibility to conveniently change and develop their applications while also offering a means of field programming. Flash Data Memory Structure The internal Flash Data Memory has a capacity of be- tween 2M ´8 bit and 128K´8 bit. Unlike the Program Memory and RAM Data Memory, the Flash Data Memory is not directly mapped and is therefore not directly acces- sible in the same way as the other types of memory. Accessing the Flash Data Memory The Flash Data Memory is accessed using a set of Macros in the library. These instructions control all func- tions of the Flash such as read, write, erase, enable etc. The internal Flash structure is similar to that of a stan- dard SPI Flash Memory, for which 4 pins are used for transfer of instruction, address and data information. These are the Chip Select pin, CS, Serial Clock pin, SCK, Data In pin, SI and the Data Out pin, SO. All ac- tions related to the Flash Memory must be conducted through each of these four Flash Memory download pins. By manipulating these four pin in the device, in ac- cordance with the accompanying timing diagrams, the microcontroller can communicate with the Flash Mem- ory and carry out the required read and write instruc- tions. When reading data from the Flash Memory, CS should be set to ²0² to start the data transmission. The data will clocked out on the rising edge of SCK and appear on SO. The SO pin will normally be in a high-impedance condition unless a READ statement is being executed. When writing to the Flash Memory the data must be pre- sented first on SI and then clocked in on the rising edge of SCK. After all the instruction, address and data infor- mation has been transmitted, CS should be set to ²1² to terminate the data transmission. Note that after power on the Flash Memory must be initialised as described. READ The ²READ² instruction is used to read out one or more bytes of data from the Flash Data Memory. To instigate a ²READ² instruction, the CS bit should be set low, fol- lowed by a command instruction and then the instruction code ²03², all transmitted via the SI bit. The address in- formation should then follow with the MSB being trans- mitted first. After the last address bit, A0, has been transmitted, the data can be clocked out, bit D7 first, on the rising edge of the SCK clock signal and can be read via the SO bit. The data information will first precede the reading of the first data bit, D7. After the full byte has been read out, the internal address will be automatically incremented allowing the next consecutive data byte to be read out without entering further address data. As long as the CS bit remains low, data bit D7 of the next address will automatically follow data bit D0 of the previ- ous address being inserted between them. The address will keep incrementing in this way until CS returns to a high value. SO will normally be in a high impedance con- dition until the ²READ² instruction is executed. |
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