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PIC12F1822-I/MF 数据表(PDF) 345 Page - Microchip Technology |
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PIC12F1822-I/MF 数据表(HTML) 345 Page - Microchip Technology |
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345 / 398 page  2010 Microchip Technology Inc. Preliminary DS41413A-page 345 PIC12F/LF1822/16F/LF1823 29.5 Memory Programming Requirements DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C TA +125°C Param No. Sym. Characteristic Min. Typ† Max. Units Conditions Program Memory Programming Specifications D110 VIHH Voltage on MCLR/VPP/RA5 pin 8.0 — 9.0 V (Note 3, Note 4) D111 IDDP Supply Current during Programming —— 10 mA D112 VDD for Bulk Erase 2.7 — VDD max. V D113 VPEW VDD for Write or Row Erase VDD min. —VDD max. V D114 IPPPGM Current on MCLR/VPP during Erase/ Write —— 1.0 mA D115 IDDPGM Current on VDD during Erase/Write — 5.0 mA Data EEPROM Memory D116 ED Byte Endurance 100K — — E/W -40 C to +85C D117 VDRW VDD for Read/Write VDD min. —VDD max. V D118 TDEW Erase/Write Cycle Time — 4.0 5.0 ms D119 TRETD Characteristic Retention 40 — — Year Provided no other specifications are violated D120 TREF Number of Total Erase/Write Cycles before Refresh(2) 1M 10M — E/W -40°C to +85°C Program Flash Memory D121 EP Cell Endurance 10K — — E/W -40 C to +85C (Note 1) D122 VPR VDD for Read VDD min. —VDD max. V D123 TIW Self-timed Write Cycle Time — 2 2.5 ms D124 TRETD Characteristic Retention 40 — — Year Provided no other specifications are violated † Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: Self-write and Block Erase. 2: Refer to Section 11.2 “Using the Data EEPROM” for a more detailed discussion on data EEPROM endurance. 3: Required only if single-supply programming is disabled. 4: The MPLAB ICD 2 does not support variable VPP output. Circuitry to limit the ICD 2 VPP voltage must be placed between the ICD 2 and target system when programming or debugging with the ICD 2. |
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