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WM72016 数据表(PDF) 5 Page - Ramtron International Corporation

部件名 WM72016
功能描述  16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access
PDF  32 Pages
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制造商  RAMTRON [Ramtron International Corporation]
网页  http://www.ramtron.com
标志 RAMTRON - Ramtron International Corporation

WM72016 数据表(HTML) 5 Page - Ramtron International Corporation

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WM72016 – Secure F-RAM with Gen-2 RFID and Serial Port
Rev. 1.4
May 2011
Page 5 of 32
DSPI
Address
Gen-2
Memory Bank
Gen-2
Address
Word
Pointer
(EBV8)
Description
0x3DA
USER
0x3C6
0x8746
0x3DB
USER
0x3C7
0x8747
16k Memory: END
(BLK_SIZE = 2 words/block)
0x3DC
USER
0x3C8
0x8748
0x3DD
USER
0x3C9
0x8749
0x3DE
USER
0x3CA
0x874A
0x3EA
USER
0x3D6
0x8756
0x3EB
USER
0x3D7
0x8757
16k Memory: END
(BLK_SIZE = 4 words/block)
0x3EC
USER
0x3D8
0x8758
0x3ED
USER
0x3D9
0x8759
0x3EE
USER
0x3DA
0x875A
0x3F3
USER
0x3DF
0x875F
16k Memory: END
(BLK_SIZE = 8 words/block)
0x3F4
USER
0x3E0
0x8760
0x3F5
USER
0x3E1
0x8761
0x3F6
USER
0x3E2
0x8762
0x3F7
USER
0x3E3
0x8763
16k Memory: END
(BLK_SIZE = 16 words/block)
0x3F8
USER
0x3E4
0x8764
0x3F9
USER
0x3E5
0x8765
16k Memory: END
(BLK_SIZE = 32 words/block)
0x3FA
USER
0x3E6
0x8766
0x3FB
USER
0x3E7
0x8767
(BLK_SIZE > 32 words/block)
0x3FC
USER
0x3E8
0x8768
RESERVED
0x3FD
USER
0x3E9
0x8769
RESERVED
0x3FE
USER
0x3EA
0x876A
RESERVED
0x3FF
USER
0x3EB
0x876B
RESERVED
NOTE: When accessing the memory through the DSPI serial port, care must be taken to ensure that reserved
memory required to store critical parameters for the operation of the device is not altered.
GEN2 WM72016 MEMORY BANKS
The RFID memory banks reside in Ramtron‟s non-volatile F-RAM memory. F-RAM brings many benefits to
the WM72016. The first benefit is the size of the memory itself – 16k-bit, most of which is available in the
USER memory bank.
F-RAM‟s impact on the Gen2 protocol is most dramatically seen when writing to
WM72016 memory. Unlike EEPROM memory, no charge pump or memory soak time is required to write to
WM72016 memory resulting in zero time and zero power penalties.
The write cycle is completed
immediately, allowing an interrogator to continue writing additional data to memory with no time penalty
incurred due to the memory itself. A comparison between F-RAM and EEPROM memories is shown in Figure
3. The figure shows the minimum number of Gen2 instructions required to perform a SELECT, INVENTORY,
and ACCESS sequence of commands to write a data word to memory. The same interrogator command
sequence is transmitted to the WM72016 and an EEPROM-based RFID. The effect of the EEPROM time
penalty is shown within the context of the protocol.



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