M95320-R datasheet(35/48 Pages) STMICROELECTRONICS

35 / 48 page

M95320-W M95320-R M95320-DR

DC and AC parameters

Doc ID 5711 Rev 14

35/48

Table 16.

DC characteristics (M95320-R, M95320-DR, device grade 6)

Symbol

Parameter

Test conditions(1)

Min.

Max.

Unit

ILI

Input leakage

current

VIN = VSS or VCC

± 2

µA

ILO

Output leakage

current

S = VCC, voltage applied on Q = VSS or VCC

± 2

µA

ICC

Supply current

(Read)

VCC = 1.8 V, max clock frequency (fC),

C = 0.1VCC/0.9VCC, Q = open

VCC = 1.8 V, fC = 5 MHz,

C = 0.1VCC/0.9VCC, Q = open

2(2)

ICC0

(3)

Supply current

(Write)

VCC = 1.8 V, during tW, S = VCC

5mA

ICC1

Supply current

(Standby)

VCC = 1.8 V, S = VCC, VIN = VSS or VCC

1µA

VIL

Input low voltage

1.8 V

≤VCC < 2.5 V

–0.45

0.25 VCC

VIH

Input high voltage

1.8 V

≤VCC < 2.5 V

0.75 VCC

VCC+1

VOL

Output low voltage

IOL = 0.15 mA, VCC = 1.8 V

0.3

Output high voltage

IOH = –0.1 mA, VCC = 1.8 V

0.8 VCC

VRES

(3)

Internal reset

threshold voltage

1.0(4)

1.65(5)

If the application uses the M95320-R device at 2.5 V

≤VCC ≤5.5 V and –40 °C ≤TA ≤+85 °C, please refer to Table 15: DC

characteristics (M95320-W, device grade 6), rather than to the above table.

For the device identified by process letter K.

Characterized only, not tested in production.

0.7 V with the device identified by process letter K.

1.3 V with the device identified by process letter K.

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