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STM32F102xB 数据表(PDF) 65 Page - STMicroelectronics |
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STM32F102xB 数据表(HTML) 65 Page - STMicroelectronics |
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65 / 76 page ![]() STM32F102x8, STM32F102xB Electrical characteristics Doc ID 15056 Rev 4 65/76 Figure 31. ADC accuracy characteristics Figure 32. Typical connection diagram using the ADC 1. Refer to Table 45 for the values of RAIN, RADC and CADC. 2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the pad capacitance (roughly 7 pF). A high Cparasitic value will downgrade conversion accuracy. To remedy this, fADC should be reduced. EO EG 1LSBIDEAL (1) Example of an actual transfer curve (2) The ideal transfer curve (3) End point correlation line ET=Total u nadjusted er ror: maximum deviation between the actual and the ideal transfer curves. EO=Offset error: deviation between the first actual transition and the first ideal one. EG=Gain er ror: deviation between the last ideal transition and the last actual one. ED=Differential linearity error: maximum deviation between actual steps and the ideal one. EL=Integral linearity error: maximum deviation between any actual transition and the end point correlation line. 4095 4094 4093 5 4 3 2 1 0 7 6 1 2 3 456 7 4093 4094 4095 4096 (1) (2) ET ED EL (3) VDDA VSSA ai15497 VDDA 4096 [1LSBIDEAL = ai14974b STM32F102 VDD AINx IL±1 µA 0.6 V VT RAIN(1) Cparasitic VAIN 0.6 V VT RADC(1) 12-bit converter CADC(1) Sample and hold ADC converter |
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