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STM32F102xB 数据表(PDF) 33 Page - STMicroelectronics |
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STM32F102xB 数据表(HTML) 33 Page - STMicroelectronics |
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33 / 76 page ![]() STM32F102x8, STM32F102xB Electrical characteristics Doc ID 15056 Rev 4 33/76 Table 14. Maximum current consumption in Sleep mode, code running from Flash or RAM Symbol Parameter Conditions fHCLK Max(1) Unit TA = 85 °C IDD Supply current in Sleep mode External clock(2) all peripherals enabled 48 MHz 20 mA 36 MHz 15.5 24 MHz 11.5 16 MHz 8.5 8 MHz 5.5 External clock(2), all peripherals disabled 48 MHz 6 36 MHz 5 24 MHz 4.5 16 MHz 4 8 MHz 3 1. Based on characterization, tested in production at VDD max and fHCLK max with peripherals enabled. 2. External clock is 8 MHz and PLL is on when fHCLK > 8 MHz. Table 15. Typical and maximum current consumptions in Stop and Standby modes Symbol Parameter Conditions Typ(1) Max Unit VDD/ VBAT = 2.4 V VDD/VBAT = 3.3 V VDD/VBAT = 2.0 V TA = 85 °C IDD Supply current in Stop mode Regulator in Run mode, Low-speed and high-speed internal RC oscillators and high-speed oscillator OFF (no independent watchdog) 23.5 24 - 200 µA Regulator in Low Power mode, Low-speed and high-speed internal RC oscillators and high-speed oscillator OFF (no independent watchdog) 13.5 14 - 180 Supply current in Standby mode(2) Low-speed internal RC oscillator and independent watchdog ON 2.6 3.4 - - Low-speed internal RC oscillator ON, independent watchdog OFF 2.4 3.2 - - Low-speed internal RC oscillator and independent watchdog OFF, low-speed oscillator and RTC OFF 1.7 2 - 4 IDD_VBAT Backup domain supply current Low-speed oscillator and RTC ON 1.1 1.4 0.9 1.9(3) 1. Typical values are measured at TA = 25 °C. 2. To have the Standby consumption with RTC ON, add IDD_VBAT (Low-speed oscillator and RTC ON) to IDD Standby (when VDD is present the Backup Domain is powered by VDD supply). 3. Based on characterization, not tested in production. |
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