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STM32F102xB 数据表(PDF) 49 Page - STMicroelectronics |
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STM32F102xB 数据表(HTML) 49 Page - STMicroelectronics |
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49 / 76 page ![]() STM32F102x8, STM32F102xB Electrical characteristics Doc ID 15056 Rev 4 49/76 All I/Os are CMOS and TTL compliant (no software configuration required), their characteristics are covering more than strict CMOS-technology or TTL parameters. The coverage of these requirements is shown in Figure 20 and Figure 21 for standard I/Os and in Figure 22 and Figure 23 for 5V tolerant I/Os. Figure 20. Standard I/O input characteristics - CMOS port Vhys Standard I/O Schmitt trigger voltage hysteresis(2) 200 - - mV I/O FT Schmitt trigger voltage hysteresis(2) 5% VDD (3) -- mV Ilkg Input leakage current(4) VSS ≤ VIN ≤ VDD Standard I/Os -- ±1 µA VIN = 5 V, I/O FT - - 3 RPU Weak pull-up equivalent resistor(5) VIN = VSS 30 40 50 k Ω RPD Weak pull-down equivalent resistor(5) VIN = VDD 30 40 50 k Ω CIO I/O pin capacitance - 5 - pF 1. FT = Five-volt tolerant. In order to sustain a voltage higher than VDD+0.3 V, the internal pull-up/pull-down resistors must be disabled. 2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested in production. 3. With a minimum of 100 mV. 4. Leakage could be higher than max. if negative current is injected on adjacent pins. 5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This PMOS/NMOS contribution to the series resistance is minimum (~10% order). Table 34. I/O static characteristics (continued) Symbol Parameter Conditions Min Typ Max Unit ai17277b VDD (V) 1.3 0.8 2 3.6 Input range not guaranteed 1.59 1 2.7 VIH=0.41(VDD -2)+1.3 3 0.7 CMOS standard requirement VIH=0.65V DD 3.3 VIH/VIL (V) CMOS standard requirement VIL=0.35VDD ILmax IHmin V DD -2)+0.8 =0.28(V IL |
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