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STM32F102xB 数据表(PDF) 43 Page - STMicroelectronics |
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STM32F102xB 数据表(HTML) 43 Page - STMicroelectronics |
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43 / 76 page ![]() STM32F102x8, STM32F102xB Electrical characteristics Doc ID 15056 Rev 4 43/76 Note: For CL1 and CL2 it is recommended to use high-quality ceramic capacitors in the 5 pF to 15 pF range selected to match the requirements of the crystal or resonator. CL1 and CL2, are usually the same size. The crystal manufacturer typically specifies a load capacitance which is the series combination of CL1 and CL2. Load capacitance CL has the following formula: CL = CL1 x CL2 / (CL1 + CL2) + Cstray where Cstray is the pin capacitance and board or trace PCB-related capacitance. Typically, it is between 2 pF and 7 pF. Caution: To avoid exceeding the maximum value of CL1 and CL2 (15 pF) it is strongly recommended to use a resonator with a load capacitance CL ≤ 7 pF. Never use a resonator with a load capacitance of 12.5 pF. Example: if you choose a resonator with a load capacitance of CL = 6 pF, and Cstray = 2 pF, then CL1 = CL2 = 8 pF. Figure 19. Typical application with a 32.768 kHz crystal 5.3.7 Internal clock source characteristics The parameters given in Table 23 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 8. High-speed internal (HSI) RC oscillator ai14978b OSC32_OU T OSC32_IN fLSE CL1 RF STM32F102xx 32.768 KH z resonator Bias controlled gain CL2 Resonator with integrated capacitors Table 23. HSI oscillator characteristics(1) 1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency 8 MHz DuCy(HSI) Duty cycle 45 55 % ACCHSI Accuracy of the HSI oscillator User-trimmed with the RCC_CR register(2) 1(3) % Factory- calibrated(4) TA = –40 to 105 °C –2 2.5 % TA = –10 to 85 °C –1.5 2.2 % TA = 0 to 70 °C –1.3 2 % TA = 25 °C –1.1 1.8 % tsu(HSI) (4) HSI oscillator startup time 12 µs IDD(HSI) (4) HSI oscillator power consumption 80 100 µA |
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