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STM32F102xB 数据表(PDF) 45 Page - STMicroelectronics

部件名 STM32F102xB
功能描述  Medium-density USB access line,ARM-based 32b MCU with 64/128KB Flash,USB FS interface,6 timers, ADC&8 com. interfaces
PDF  76 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STM32F102xB 数据表(HTML) 45 Page - STMicroelectronics

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STM32F102x8, STM32F102xB
Electrical characteristics
Doc ID 15056 Rev 4
45/76
5.3.9
Memory characteristics
Flash memory
The characteristics are given at TA = –40 to 85 °C unless otherwise specified.
Table 28.
Flash memory endurance and data retention
Table 26.
PLL characteristics
Symbol
Parameter
Value
Unit
Min(1)
Typ
Max(1)
1.
Based on characterization, not tested in production.
fPLL_IN
PLL input clock(2)
2.
Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with
the range defined by fPLL_OUT.
18.0
25
MHz
PLL input clock duty cycle
40
60
%
fPLL_OUT
PLL multiplier output clock
16
48
MHz
tLOCK
PLL lock time
200
µs
Jitter
Cycle-to-cycle jitter
300
ps
Table 27.
Flash memory characteristics
Symbol
Parameter
Conditions
Min(1)
1.
Guaranteed by design, not tested in production.
Typ
Max(1)
Unit
tprog
16-bit programming time
TA = –40 to +85 °C
40
52.5
70
µs
tERASE
Page (1 KB) erase time
TA = –40 to +85 °C
20
40
ms
tME
Mass erase time
TA = –40 to +85 °C
20
40
ms
IDD
Supply current
Read mode
fHCLK = 48 MHz with 2
wait states, VDD = 3.3 V
20
mA
Write / Erase modes
fHCLK = 48 MHz, VDD =
3.3 V
5mA
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
50
µA
Vprog
Programming voltage
2
3.6
V
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1.
Based on characterization not tested in production.
Typ
Max
NEND
Endurance
10
kcycles
tRET
Data retention
TA = 85 °C, 1000 cycles
30
Years



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